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Crucial Technology CT51264BD160B.C16F 4GB
Gloway International (HK) STKD4GAM2400-F 8GB

Crucial Technology CT51264BD160B.C16F 4GB vs Gloway International (HK) STKD4GAM2400-F 8GB

总分
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Crucial Technology CT51264BD160B.C16F 4GB

Crucial Technology CT51264BD160B.C16F 4GB

总分
star star star star star
Gloway International (HK) STKD4GAM2400-F 8GB

Gloway International (HK) STKD4GAM2400-F 8GB

差异 规格 评论

差异

Crucial Technology CT51264BD160B.C16F 4GB 需要考虑的原因
Crucial Technology CT51264BD160B.C16F 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    41 left arrow 83
    左右 51% 更低的延时
  • 更快的写入速度，GB/s
    9.7 left arrow 7.8
    测试中的平均数值
Gloway International (HK) STKD4GAM2400-F 8GB 需要考虑的原因
Gloway International (HK) STKD4GAM2400-F 8GB
报告一个错误
  • 更快的读取速度，GB/s
    14.3 left arrow 13.9
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
Crucial Technology CT51264BD160B.C16F 4GB
Gloway International (HK) STKD4GAM2400-F 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    41 left arrow 83
  • 读取速度，GB/s
    13.9 left arrow 14.3
  • 写入速度，GB/s
    9.7 left arrow 7.8
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 14 15 16
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2366 left arrow 1752

Crucial Technology CT51264BD160B.C16F 4GB RAM的比较

Corsair CMZ8GXMA1600C9 512MB
Samsung M393A4K40BB1-CRC 32GB

Gloway International (HK) STKD4GAM2400-F 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Corsair CMK64GX5M2B5200C40 32GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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