RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
zh
Русский Русский English English Español Español Português Português Deutsch Deutsch Français Français Italiano Italiano Polski Polski 中文 中文 日本語 日本語
Crucial Technology CT51264BF160B.M16F 4GB
Boya Microelectronics Inc. AM52SE22G64AP-RQ 16GB

Crucial Technology CT51264BF160B.M16F 4GB vs Boya Microelectronics Inc. AM52SE22G64AP-RQ 16GB

总分
star star star star star
Crucial Technology CT51264BF160B.M16F 4GB

Crucial Technology CT51264BF160B.M16F 4GB

总分
star star star star star
Boya Microelectronics Inc. AM52SE22G64AP-RQ 16GB

Boya Microelectronics Inc. AM52SE22G64AP-RQ 16GB

差异 规格 评论

差异

Crucial Technology CT51264BF160B.M16F 4GB 需要考虑的原因
Crucial Technology CT51264BF160B.M16F 4GB
报告一个错误
Boya Microelectronics Inc. AM52SE22G64AP-RQ 16GB 需要考虑的原因
Boya Microelectronics Inc. AM52SE22G64AP-RQ 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    25 left arrow 28
    左右 -12% 更低的延时
  • 更快的读取速度，GB/s
    15.4 left arrow 11.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.4 left arrow 8.2
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 12800
    左右 1.5 更高的带宽

规格

完整的技术规格清单
Crucial Technology CT51264BF160B.M16F 4GB
Boya Microelectronics Inc. AM52SE22G64AP-RQ 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    28 left arrow 25
  • 读取速度，GB/s
    11.8 left arrow 15.4
  • 写入速度，GB/s
    8.2 left arrow 13.4
  • 内存带宽，mbps
    12800 left arrow 19200
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    1854 left arrow 2786

Crucial Technology CT51264BF160B.M16F 4GB RAM的比较

Samsung M471B5173QH0-YK0 4GB
Elpida EBJ40UG8EFU0-GN-F 4GB

Boya Microelectronics Inc. AM52SE22G64AP-RQ 16GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Lexar Co Limited LD4AU016G-H3200GST 16GB
Lexar Co Limited LD4AU016G-H3200GST 16GB
Mushkin MRB4U300GJJM16G 16GB
Mushkin MRB4U300GJJM16G 16GB
内存RAM
Crucial Technology CT51264BF160B.M16F 4GB
Crucial Technology CT51264BF160B.M16F 4GB
Boya Microelectronics Inc. AM52SE22G64AP-RQ 16GB
Boya Microelectronics Inc. AM52SE22G64AP-RQ 16GB
内存RAM
SK Hynix HMT325S6CFR8C-H9 2GB
SK Hynix HMT325S6CFR8C-H9 2GB
SK Hynix HMA81GS6AFR8N-UH 8GB
SK Hynix HMA81GS6AFR8N-UH 8GB
内存RAM
Crucial Technology CT51264BA1339.C16F 4GB
Crucial Technology CT51264BA1339.C16F 4GB
Kingston ACR26D4S9S8KA-8 8GB
Kingston ACR26D4S9S8KA-8 8GB
内存RAM
G Skill Intl F2-8500CL5-2GBPI 2GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Kingston 9905678-058.A00G 4GB
Kingston 9905678-058.A00G 4GB
内存RAM
PNY Electronics PNY 2GB
PNY Electronics PNY 2GB
A-DATA Technology DDR4 3200 8GB
A-DATA Technology DDR4 3200 8GB
内存RAM
Elpida EBJ17RG4EFWA-DJ-F 16GB
Elpida EBJ17RG4EFWA-DJ-F 16GB
Samsung M393A2G40EB2-CTD 16GB
Samsung M393A2G40EB2-CTD 16GB
内存RAM
Samsung M378A1K43EB2-CWE 8GB
Samsung M378A1K43EB2-CWE 8GB
Apacer Technology 78.C1GQ5.C7C0B 8GB
Apacer Technology 78.C1GQ5.C7C0B 8GB
内存RAM
Samsung M471B5273EB0-CK0 4GB
Samsung M471B5273EB0-CK0 4GB
SanMax Technologies Inc. SMD4-U16G48MJ-32AA 16GB
SanMax Technologies Inc. SMD4-U16G48MJ-32AA 16GB
内存RAM
Samsung M393B1G70BH0-CK0 8GB
Samsung M393B1G70BH0-CK0 8GB
A-DATA Technology AO1P24HC4N2-BWCS 4GB
A-DATA Technology AO1P24HC4N2-BWCS 4GB
内存RAM
Kingston ACR256X64D3S1333C9 2GB
Kingston ACR256X64D3S1333C9 2GB
Apacer Technology 78.CAGR9.40C0B 8GB
Apacer Technology 78.CAGR9.40C0B 8GB
内存RAM
Kingston 99U5429-014.A00LF 4GB
Kingston 99U5429-014.A00LF 4GB
Apacer Technology D12.2324CS.001 8GB
Apacer Technology D12.2324CS.001 8GB
内存RAM
AMD AE34G1601U1 4GB
AMD AE34G1601U1 4GB
Smart Modular SF4641G8CK8IEHLSBG 8GB
Smart Modular SF4641G8CK8IEHLSBG 8GB
内存RAM
G Skill Intl F5-6400J3239G16G 16GB
G Skill Intl F5-6400J3239G16G 16GB
G Skill Intl F4-4000C16-8GTZRA 8GB
G Skill Intl F4-4000C16-8GTZRA 8GB
内存RAM