Elpida EBJ21UE8BDF0-DJ-F 2GB vs Micron Technology 16ATF1G64HZ-2G1A2 8GB

总分

Elpida EBJ21UE8BDF0-DJ-F 2GB

Elpida EBJ21UE8BDF0-DJ-F 2GB

总分

Micron Technology 16ATF1G64HZ-2G1A2 8GB

Micron Technology 16ATF1G64HZ-2G1A2 8GB

差异规格评论

差异

Elpida EBJ21UE8BDF0-DJ-F 2GB

需要考虑的原因
Elpida EBJ21UE8BDF0-DJ-F 2GB

报告一个错误

低于PassMark测试中的延时，ns

25 38

左右 34% 更低的延时

Micron Technology 16ATF1G64HZ-2G1A2 8GB

需要考虑的原因
Micron Technology 16ATF1G64HZ-2G1A2 8GB

报告一个错误

更快的读取速度，GB/s

13.9 13.8

测试中的平均数值
更快的写入速度，GB/s

10.5 8.2

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Elpida EBJ21UE8BDF0-DJ-F 2GB

Micron Technology 16ATF1G64HZ-2G1A2 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

25 38
读取速度，GB/s

13.8 13.9
写入速度，GB/s

8.2 10.5
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2152 2400

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

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Corsair CMK16GX4M4B3600C18 4GB

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Samsung M471A5644EB0-CPB 2GB

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Crucial Technology CT51264AC800.C16FC 4GB

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Micron Technology 8ATF1G64HZ-2G3B1 8GB

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Corsair CMD8GX4M2B3866C18 4GB

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Samsung M391B5673EH1-CH9 2GB

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Teikon TMA41GU6AFR8N-TFSC 8GB

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SK Hynix HYMP112U64CP8-S6 1GB

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G Skill Intl F4-2133C15-8GNT 8GB

Micron Technology 16JSF25664HZ-1G1F1 2GB

Micron Technology 16JSF25664HZ-1G1F1 2GB

A-DATA Technology DDR4 2800 2OZ 4GB

A-DATA Technology DDR4 2800 2OZ 4GB

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Corsair CMY8GX3M2A2666C10 4GB

Patriot Memory (PDP Systems) PSD48G266681S 8GB

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Kingston KP4T2F-PSB 4GB

Gold Key Technology Co Ltd NMUD416E82-3200D 16GB

Gold Key Technology Co Ltd NMUD416E82-3200D 16GB