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Elpida EBJ40EG8BFWB-JS-F 4GB
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB

Elpida EBJ40EG8BFWB-JS-F 4GB vs Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB

总分
star star star star star
Elpida EBJ40EG8BFWB-JS-F 4GB

Elpida EBJ40EG8BFWB-JS-F 4GB

总分
star star star star star
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB

Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB

差异 规格 评论

差异

Elpida EBJ40EG8BFWB-JS-F 4GB 需要考虑的原因
Elpida EBJ40EG8BFWB-JS-F 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    26 left arrow 37
    左右 30% 更低的延时
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB 需要考虑的原因
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB
报告一个错误
  • 更快的读取速度，GB/s
    16 left arrow 13.9
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.6 left arrow 9.6
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 14200
    左右 1.35 更高的带宽

规格

完整的技术规格清单
Elpida EBJ40EG8BFWB-JS-F 4GB
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    26 left arrow 37
  • 读取速度，GB/s
    13.9 left arrow 16.0
  • 写入速度，GB/s
    9.6 left arrow 12.6
  • 内存带宽，mbps
    14200 left arrow 19200
Other
  • 描述
    PC3-14200, 1.5V, CAS Supported: 6 7 8 9 10 11 13 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    no data left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2558 left arrow 2808

Elpida EBJ40EG8BFWB-JS-F 4GB RAM的比较

Corsair CML4GX3M1A1600C9 4GB
Corsair CML4GX3M2A1600C9 2GB

Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

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