Samsung M393B2G70BH0-CK0 16GB vs Kingston KF2933C17S4/16G 16GB

总分

Samsung M393B2G70BH0-CK0 16GB

Samsung M393B2G70BH0-CK0 16GB

总分

Kingston KF2933C17S4/16G 16GB

Kingston KF2933C17S4/16G 16GB

差异规格评论

差异

Samsung M393B2G70BH0-CK0 16GB

需要考虑的原因
Samsung M393B2G70BH0-CK0 16GB

报告一个错误

Kingston KF2933C17S4/16G 16GB

需要考虑的原因
Kingston KF2933C17S4/16G 16GB

报告一个错误

低于PassMark测试中的延时，ns

26 54

左右 -108% 更低的延时
更快的读取速度，GB/s

16.2 9.2

测试中的平均数值
更快的写入速度，GB/s

14.0 8.1

测试中的平均数值
更高的内存带宽，mbps

23400 12800

左右 1.83 更高的带宽

规格

完整的技术规格清单

Samsung M393B2G70BH0-CK0 16GB

Kingston KF2933C17S4/16G 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

54 26
读取速度，GB/s

9.2 16.2
写入速度，GB/s

8.1 14.0
内存带宽，mbps

12800 23400

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-23400, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18
时序/时钟速度

9-9-9-24 / 1600 MHz 19-19-19, 20-20-20, 21-21-21, 22-22-22 / 2933 MHz
排名PassMark (越多越好)

2105 3377

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Team Group Inc. Team-Value-800 2GB

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Samsung M4 70T2953EZ3-CE6 1GB

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Crucial Technology CT8G4SFS824A.M8FA 8GB

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A-DATA Technology AD73I1B1672EG 2GB

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Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N-TF 4GB

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Samsung M393A1G40EB1-CPB 8GB

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ASint Technology SSA302G08-EGN1C 4GB

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Kingston 9905584-016.A00LF 4GB

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AMD AE34G1601U1 4GB

AMD AE34G1601U1 4GB

G Skill Intl F4-2400C15-8GRK 8GB

G Skill Intl F4-2400C15-8GRK 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

G Skill Intl F4-3600C14-8GTRGB 8GB

G Skill Intl F4-3600C14-8GTRGB 8GB

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Kingston 99U5471-030.A00LF 8GB

Maxsun MSD48G30M3 8GB

Maxsun MSD48G30M3 8GB

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Corsair CM4X16GC3200C16K4 16GB

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Kingston 99U5474-013.A00LF 2GB

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Hynix Semiconductor (Hyundai Electronics) HMA41GU6MFR8N-TF 8GB

Hynix Semiconductor (Hyundai Electronics) HMA41GU6MFR8N