Elpida EBJ41UF8BDW0-GN-F 4GB vs AMD R748G2400U2S 8GB

总分

Elpida EBJ41UF8BDW0-GN-F 4GB

Elpida EBJ41UF8BDW0-GN-F 4GB

总分

AMD R748G2400U2S 8GB

AMD R748G2400U2S 8GB

差异规格评论

差异

Elpida EBJ41UF8BDW0-GN-F 4GB

需要考虑的原因
Elpida EBJ41UF8BDW0-GN-F 4GB

报告一个错误

AMD R748G2400U2S 8GB

需要考虑的原因
AMD R748G2400U2S 8GB

报告一个错误

低于PassMark测试中的延时，ns

23 38

左右 -65% 更低的延时
更快的读取速度，GB/s

16.4 14.4

测试中的平均数值
更快的写入速度，GB/s

11.2 9.5

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Elpida EBJ41UF8BDW0-GN-F 4GB

AMD R748G2400U2S 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

38 23
读取速度，GB/s

14.4 16.4
写入速度，GB/s

9.5 11.2
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2361 2686

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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G Skill Intl F4-4000C18-16GTRG 16GB

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Crucial Technology BLT4G4D30AETA.K8FE 4GB

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Kingston ACR256X64D3S1333C9 2GB

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Micron Technology 18ASF2G72PDZ-2G6D1 16GB

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Corsair CMK32GX5M2B5600C36 16GB

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Hoodisk Electronics Co Ltd GKE800SO102408-2666A 8GB

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Kingston 9905471-006.A01LF 4GB

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Apacer Technology 78.01GA0.9K5 1GB

Apacer Technology 78.01GA0.9K5 1GB

Micron Technology 16ATF4G64AZ-3G2B1 32GB

Micron Technology 16ATF4G64AZ-3G2B1 32GB

Samsung M393B5170FH0-CK0 4GB

Samsung M393B5170FH0-CK0 4GB

Micron Technology 16ATF2G64AZ-2G3E1 16GB

Micron Technology 16ATF2G64AZ-2G3E1 16GB

Crucial Technology CT2K102464BD160B 8GB

Crucial Technology CT2K102464BD160B 8GB

Micron Technology 18ADF2G72AZ-2G6E1 16GB

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SK Hynix HMT425S6CFR6A-PB 2GB

SK Hynix HMT425S6CFR6A-PB 2GB

Crucial Technology CB4GU2400.M8E 4GB

Crucial Technology CB4GU2400.M8E 4GB

Samsung M471B5273DH0-CK0 4GB

Samsung M471B5273DH0-CK0 4GB

Corsair CMU64GX4M4A2666C16 16GB

Corsair CMU64GX4M4A2666C16 16GB