Elpida EBJ41UF8BDW0-GN-F 4GB vs G Skill Intl F4-2400C15-16GFX 16GB

总分

Elpida EBJ41UF8BDW0-GN-F 4GB

Elpida EBJ41UF8BDW0-GN-F 4GB

总分

G Skill Intl F4-2400C15-16GFX 16GB

G Skill Intl F4-2400C15-16GFX 16GB

差异规格评论

差异

Elpida EBJ41UF8BDW0-GN-F 4GB

需要考虑的原因
Elpida EBJ41UF8BDW0-GN-F 4GB

报告一个错误

低于PassMark测试中的延时，ns

38 39

左右 3% 更低的延时
更快的读取速度，GB/s

14.4 14

测试中的平均数值

G Skill Intl F4-2400C15-16GFX 16GB

需要考虑的原因
G Skill Intl F4-2400C15-16GFX 16GB

报告一个错误

更快的写入速度，GB/s

11.3 9.5

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Elpida EBJ41UF8BDW0-GN-F 4GB

G Skill Intl F4-2400C15-16GFX 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

38 39
读取速度，GB/s

14.4 14.0
写入速度，GB/s

9.5 11.3
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 9 11 13 14 15
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2361 2810

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CMH16GX4M2Z3200C16 8GB

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Samsung M471B5673FH0-CF8 2GB

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Crucial Technology BL16G26C16U4W.16FD 16GB

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Kingston 9905599-010.A00G 4GB

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Samsung M391B5673EH1-CH9 2GB

SanMax Technologies Inc. SMD4-U8G48MA-24R 8GB

SanMax Technologies Inc. SMD4-U8G48MA-24R 8GB

Samsung M471A1G44AB0-CWE 8GB

Samsung M471A1G44AB0-CWE 8GB

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SK Hynix HMA82GR7AFR8N-UH 16GB

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Micron Technology 8ATF2G64HZ-3G2E2 16GB

Samsung V-GeN D4S8GL32A8TL 8GB

Samsung V-GeN D4S8GL32A8TL 8GB

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

Teikon TMA41GU6AFR8N-TFSC 8GB

Teikon TMA41GU6AFR8N-TFSC 8GB