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G Skill Intl F3-14900CL9-4GBXL 4GB
Samsung M378B1G73AH0-CH9 8GB

G Skill Intl F3-14900CL9-4GBXL 4GB vs Samsung M378B1G73AH0-CH9 8GB

总分
star star star star star
G Skill Intl F3-14900CL9-4GBXL 4GB

G Skill Intl F3-14900CL9-4GBXL 4GB

总分
star star star star star
Samsung M378B1G73AH0-CH9 8GB

Samsung M378B1G73AH0-CH9 8GB

差异 规格 评论

差异

G Skill Intl F3-14900CL9-4GBXL 4GB 需要考虑的原因
G Skill Intl F3-14900CL9-4GBXL 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    36 left arrow 73
    左右 51% 更低的延时
  • 更快的读取速度，GB/s
    15.8 left arrow 6.1
    测试中的平均数值
  • 更快的写入速度，GB/s
    10.0 left arrow 3.2
    测试中的平均数值
  • 更高的内存带宽，mbps
    12800 left arrow 10600
    左右 1.21% 更高的带宽
Samsung M378B1G73AH0-CH9 8GB 需要考虑的原因
Samsung M378B1G73AH0-CH9 8GB
报告一个错误

规格

完整的技术规格清单
G Skill Intl F3-14900CL9-4GBXL 4GB
Samsung M378B1G73AH0-CH9 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR3
  • PassMark中的延时，ns
    36 left arrow 73
  • 读取速度，GB/s
    15.8 left arrow 6.1
  • 写入速度，GB/s
    10.0 left arrow 3.2
  • 内存带宽，mbps
    12800 left arrow 10600
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 7 8 9 left arrow PC3-10600, 1.5V, CAS Supported: 6 7 8 9
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 7-7-7-20 / 1333 MHz
  • 排名PassMark (越多越好)
    2538 left arrow 1004

G Skill Intl F3-14900CL9-4GBXL 4GB RAM的比较

Samsung M378B5273DH0-CH9 4GB
SK Hynix HMT325U6CFR8C-H9 2GB

Samsung M378B1G73AH0-CH9 8GB RAM的比较

Kingston KHX1866C10D3/8GX 8GB
SK Hynix HMT325U6CFR8C-H9 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

A-DATA Technology DOVF1B163G2G 2GB
A-DATA Technology DOVF1B163G2G 2GB
Ramaxel Technology RMUA5110MB78HAF2400 8GB
Ramaxel Technology RMUA5110MB78HAF2400 8GB
内存RAM
Samsung M393B1K70CH0-CH9 8GB
Samsung M393B1K70CH0-CH9 8GB
Samsung M393B1G70QH0-CMA 8GB
Samsung M393B1G70QH0-CMA 8GB
内存RAM
A-DATA Technology VDQVE1B16 2GB
A-DATA Technology VDQVE1B16 2GB
Shenzhen Xingmem Technology Corp KRE-D4U2400M/4G 4GB
Shenzhen Xingmem Technology Corp KRE-D4U2400M/4G 4GB
内存RAM
A-DATA Technology DQVE1908 512MB
A-DATA Technology DQVE1908 512MB
Crucial Technology CT16G4SFD824A.C16FJ 16GB
Crucial Technology CT16G4SFD824A.C16FJ 16GB
内存RAM
Kingmax Semiconductor FLFE85F-C8KL9 2GB
Kingmax Semiconductor FLFE85F-C8KL9 2GB
G Skill Intl F4-3200C15-8GTZKY 8GB
G Skill Intl F4-3200C15-8GTZKY 8GB
内存RAM
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
G Skill Intl F4-3200C16-4GTZB 4GB
G Skill Intl F4-3200C16-4GTZB 4GB
内存RAM
Kingston 99U5474-038.A00LF 4GB
Kingston 99U5474-038.A00LF 4GB
Micron Technology 16GB 2133MHz DIMM 16GB
Micron Technology 16GB 2133MHz DIMM 16GB
内存RAM
Kingston X2YH1K-MIE 16GB
Kingston X2YH1K-MIE 16GB
Crucial Technology BL16G26C16U4B.16FE 16GB
Crucial Technology BL16G26C16U4B.16FE 16GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology CT8G4DFS824A.C8FBR1 8GB
Crucial Technology CT8G4DFS824A.C8FBR1 8GB
内存RAM
Elpida EBJ81UG8BBU0-GN-F 8GB
Elpida EBJ81UG8BBU0-GN-F 8GB
Kingston 9905744-023.A00G 16GB
Kingston 9905744-023.A00G 16GB
内存RAM
Samsung M471B5673FH0-CF8 2GB
Samsung M471B5673FH0-CF8 2GB
G Skill Intl F4-3200C16-8GVSB 8GB
G Skill Intl F4-3200C16-8GVSB 8GB
内存RAM
Kingston KF552C40-16 16GB
Kingston KF552C40-16 16GB
Kingston 9965669-019.A00G 16GB
Kingston 9965669-019.A00G 16GB
内存RAM
Samsung M471B5173QH0-YK0 4GB
Samsung M471B5173QH0-YK0 4GB
Crucial Technology BLS8G4D240FSC.16FBR2 8GB
Crucial Technology BLS8G4D240FSC.16FBR2 8GB
内存RAM
takeMS International AG TMS2GB264D083805EV 2GB
takeMS International AG TMS2GB264D083805EV 2GB
Micron Technology 18ASF1G72PDZ-2G1A1 8GB
Micron Technology 18ASF1G72PDZ-2G1A1 8GB
内存RAM