G Skill Intl F3-2666C12-8GTXD 8GB vs G Skill Intl F4-3466C16-4GTZ 4GB

总分

G Skill Intl F3-2666C12-8GTXD 8GB

G Skill Intl F3-2666C12-8GTXD 8GB

总分

G Skill Intl F4-3466C16-4GTZ 4GB

G Skill Intl F4-3466C16-4GTZ 4GB

差异规格评论

差异

G Skill Intl F3-2666C12-8GTXD 8GB

需要考虑的原因
G Skill Intl F3-2666C12-8GTXD 8GB

报告一个错误

G Skill Intl F4-3466C16-4GTZ 4GB

需要考虑的原因
G Skill Intl F4-3466C16-4GTZ 4GB

报告一个错误

低于PassMark测试中的延时，ns

19 28

左右 -47% 更低的延时
更快的读取速度，GB/s

20 18.2

测试中的平均数值
更快的写入速度，GB/s

15.8 11.5

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

G Skill Intl F3-2666C12-8GTXD 8GB

G Skill Intl F4-3466C16-4GTZ 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

28 19
读取速度，GB/s

18.2 20.0
写入速度，GB/s

11.5 15.8
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

3067 3192

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Transcend Information JM2400HSB-8G 8GB

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Corsair CMW64GX4M2D3000C16 32GB

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Kingston KHX1600C9S3L/8G 8GB

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Apacer Technology D12.2344DT.001 4GB

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Samsung M378B5273CH0-CH9 4GB

Samsung M378B5273CH0-CH9 4GB

Corsair CMD64GX4M4B3466C16 16GB

Corsair CMD64GX4M4B3466C16 16GB

SK Hynix HMT351U6CFR8C-H9 4GB

SK Hynix HMT351U6CFR8C-H9 4GB

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G Skill Intl F4-4266C17-8GTZRB 8GB

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

SK Hynix HMA81GS6CJRJR-VK 8GB

SK Hynix HMA81GS6CJRJR-VK 8GB

A-DATA Technology DDR3 1333G 2GB

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Samsung M378A1K43BB2-CTD 8GB

Samsung M378A1K43BB2-CTD 8GB