G Skill Intl F5-5600J4040C16G 16GB vs Chun Well Technology Holding Limited D4U0826190B 8GB

总分

G Skill Intl F5-5600J4040C16G 16GB

G Skill Intl F5-5600J4040C16G 16GB

总分

Chun Well Technology Holding Limited D4U0826190B 8GB

Chun Well Technology Holding Limited D4U0826190B 8GB

差异规格评论

差异

G Skill Intl F5-5600J4040C16G 16GB

需要考虑的原因
G Skill Intl F5-5600J4040C16G 16GB

报告一个错误

低于PassMark测试中的延时，ns

22 29

左右 24% 更低的延时
更快的写入速度，GB/s

13.5 12.9

测试中的平均数值

Chun Well Technology Holding Limited D4U0826190B 8GB

需要考虑的原因
Chun Well Technology Holding Limited D4U0826190B 8GB

报告一个错误

更快的读取速度，GB/s

16.7 14.9

测试中的平均数值
更高的内存带宽，mbps

21300 19200

左右 1.11 更高的带宽

规格

完整的技术规格清单

G Skill Intl F5-5600J4040C16G 16GB

Chun Well Technology Holding Limited D4U0826190B 8GB

主要特点

存储器类型

DDR5 DDR4
PassMark中的延时，ns

22 29
读取速度，GB/s

14.9 16.7
写入速度，GB/s

13.5 12.9
内存带宽，mbps

19200 21300

Other

描述

PC5-19200, 1.1V, CAS Supported: 22 28 30 32 36 40 42 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

no data / 2400 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

3679 3273

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston SMD4-S8G48HJ-26V 8GB

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Samsung M3 78T5663RZ3-CE6 2GB

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A-DATA Technology AO1P29KC8T1-BY9SSB 8GB

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AMD R748G2606U2S 8GB

AMD R748G2606U2S 8GB

Kingston KHX2133C11D3/4GX 4GB

Kingston KHX2133C11D3/4GX 4GB

Kingston 9905701-011.A00G 16GB

Kingston 9905701-011.A00G 16GB

Samsung M471B1G73QH0-YK0 8GB

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Micron Technology 9ASF51272AZ-2G3B1 4GB

Micron Technology 9ASF51272AZ-2G3B1 4GB

SK Hynix HMT325U6CFR8C-PB 2GB

SK Hynix HMT325U6CFR8C-PB 2GB

Micron Technology 18ASF2G72AZ-2G1A1 16GB

Micron Technology 18ASF2G72AZ-2G1A1 16GB