Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB

Micron Technology 36ASF2G72PZ-2G4AT 16GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB vs Micron Technology 36ASF2G72PZ-2G4AT 16GB

总分

Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB

总分

Micron Technology 36ASF2G72PZ-2G4AT 16GB

Micron Technology 36ASF2G72PZ-2G4AT 16GB

差异规格评论

差异

Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB

需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB

报告一个错误

低于PassMark测试中的延时，ns

35 36

左右 3% 更低的延时
更快的写入速度，GB/s

7.9 7.2

测试中的平均数值

Micron Technology 36ASF2G72PZ-2G4AT 16GB

需要考虑的原因
Micron Technology 36ASF2G72PZ-2G4AT 16GB

报告一个错误

更高的内存带宽，mbps

19200 17000

左右 1.13 更高的带宽

规格

完整的技术规格清单

Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB

Micron Technology 36ASF2G72PZ-2G4AT 16GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

35 36
读取速度，GB/s

9.8 9.8
写入速度，GB/s

7.9 7.2
内存带宽，mbps

17000 19200

Other

描述

PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 PC4-19200, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19 21
时序/时钟速度

14-14-14, 15-15-15, 16-16-16 / 2133 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2126 2220

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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