RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB
Micron Technology 36ASF2G72PZ-2G4AT 16GB
Compare
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB vs Micron Technology 36ASF2G72PZ-2G4AT 16GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB
Overall score
Micron Technology 36ASF2G72PZ-2G4AT 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB
Report a bug
Below the latency in the PassMark tests, ns
35
36
Around 3% lower latency
Faster write speed, GB/s
7.9
7.2
Average value in the tests
Reasons to consider
Micron Technology 36ASF2G72PZ-2G4AT 16GB
Report a bug
Higher memory bandwidth, mbps
19200
17000
Around 1.13 higher bandwidth
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB
Micron Technology 36ASF2G72PZ-2G4AT 16GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
35
36
Read speed, GB/s
9.8
9.8
Write speed, GB/s
7.9
7.2
Memory bandwidth, mbps
17000
19200
Other
Description
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
PC4-19200, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19 21
Timings / Clock speed
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
2126
2220
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB RAM comparisons
TwinMOS 8DHE3MN8-HATP 2GB
Corsair CMK16GX4M2K4266C16 8GB
Micron Technology 36ASF2G72PZ-2G4AT 16GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
G Skill Intl F3-10600CL9-2GBNT 2GB
Gold Key Technology Co Ltd GKE400SO51216-2400 4GB
Samsung M395T2863QZ4-CF76 1GB
SanMax Technologies Inc. SMD4-U8G48MA-24R 8GB
Samsung M393B2G70BH0-CH9 16GB
Corsair CMK16GX4M2A2666C18 8GB
Samsung M391B5273CH0-CH9 4GB
Thermaltake Technology Co Ltd R009D408GX2-3600C18B 8GB
Kingston 99U5474-023.A00LF 4GB
Mushkin 99[2/7/4]209F 8GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N
Micron Technology 36ASF2G72PZ-2G4AT 16GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
Lexar Co Limited LD4BU008G-H3200ULH 8GB
SK Hynix HYMP512S64CP8-Y5 1GB
Apacer Technology 78.CAGPN.AZ50C 8GB
Kingston 9905702-010.A00G 8GB
Kingston KTP9W1-MIE 16GB
Nanya Technology NT512T64U88B0BY-3C 512MB
Kingston 9965669-008.A03G 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingmax Semiconductor GZOH23F-18---------- 16GB
Samsung M471B5673FH0-CF8 2GB
Kingston 9905744-027.A00G 16GB
Kingston 9965433-034.A00LF 4GB
Kingston 9965604-027.D00G 8GB
Samsung M395T2863QZ4-CF76 1GB
Corsair CMU64GX4M4C3200C16 16GB
Report a bug
×
Bug description
Source link