Hynix Semiconductor (Hyundai Electronics) HMA41GU6AFR8N-TF 8GB vs Kingston KF2666C13D4/8GX 8GB

总分

Hynix Semiconductor (Hyundai Electronics) HMA41GU6AFR8N-TF 8GB

Hynix Semiconductor (Hyundai Electronics) HMA41GU6AFR8N-TF 8GB

总分

Kingston KF2666C13D4/8GX 8GB

Kingston KF2666C13D4/8GX 8GB

差异规格评论

差异

Hynix Semiconductor (Hyundai Electronics) HMA41GU6AFR8N-TF 8GB

需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA41GU6AFR8N-TF 8GB

报告一个错误

Kingston KF2666C13D4/8GX 8GB

需要考虑的原因
Kingston KF2666C13D4/8GX 8GB

报告一个错误

更快的读取速度，GB/s

16.7 15.6

测试中的平均数值
更快的写入速度，GB/s

14.1 11.3

测试中的平均数值
更高的内存带宽，mbps

19200 17000

左右 1.13 更高的带宽

规格

完整的技术规格清单

Hynix Semiconductor (Hyundai Electronics) HMA41GU6AFR8N-TF 8GB

Kingston KF2666C13D4/8GX 8GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

27 27
读取速度，GB/s

15.6 16.7
写入速度，GB/s

11.3 14.1
内存带宽，mbps

17000 19200

Other

描述

PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

14-14-14, 15-15-15, 16-16-16 / 2133 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2687 3342

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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SK Hynix HMA81GS6CJRJR-VK 8GB

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TwinMOS 8DPT5MK8-TATP 2GB

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Micron Technology 8ATF1G64AZ-2G3H1R 8GB

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G Skill Intl F3-1333C9-4GIS 4GB

G Skill Intl F3-1333C9-4GIS 4GB

SK Hynix GKE160SO102408-2400 16GB

SK Hynix GKE160SO102408-2400 16GB

TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

Kingston XRGM6C-MIE 16GB

Kingston XRGM6C-MIE 16GB

Kingston 9905584-016.A00LF 4GB

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Hewlett-Packard 7EH98AA#ABB 8GB

Hewlett-Packard 7EH98AA#ABB 8GB

Elpida EBJ21UE8BDF0-DJ-F 2GB

Elpida EBJ21UE8BDF0-DJ-F 2GB

Panram International Corporation W4U2666P-8G 8GB

Panram International Corporation W4U2666P-8G 8GB