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Hynix Semiconductor (Hyundai Electronics) HMA81GS6JJR8N-VK 8GB
SK Hynix HMA81GS6JJR8N-VK 8GB

Hynix Semiconductor (Hyundai Electronics) HMA81GS6JJR8N-VK 8GB vs SK Hynix HMA81GS6JJR8N-VK 8GB

总分
star star star star star
Hynix Semiconductor (Hyundai Electronics) HMA81GS6JJR8N-VK 8GB

Hynix Semiconductor (Hyundai Electronics) HMA81GS6JJR8N-VK 8GB

总分
star star star star star
SK Hynix HMA81GS6JJR8N-VK 8GB

SK Hynix HMA81GS6JJR8N-VK 8GB

差异 规格 评论

差异

Hynix Semiconductor (Hyundai Electronics) HMA81GS6JJR8N-VK 8GB 需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA81GS6JJR8N-VK 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    26 left arrow 34
    左右 24% 更低的延时
  • 更快的读取速度，GB/s
    16.8 left arrow 15.7
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.5 left arrow 11.9
    测试中的平均数值
SK Hynix HMA81GS6JJR8N-VK 8GB 需要考虑的原因
SK Hynix HMA81GS6JJR8N-VK 8GB
报告一个错误

规格

完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) HMA81GS6JJR8N-VK 8GB
SK Hynix HMA81GS6JJR8N-VK 8GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    26 left arrow 34
  • 读取速度，GB/s
    16.8 left arrow 15.7
  • 写入速度，GB/s
    13.5 left arrow 11.9
  • 内存带宽，mbps
    21300 left arrow 21300
Other
  • 描述
    PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2880 left arrow 2803

Hynix Semiconductor (Hyundai Electronics) HMA81GS6JJR8N-VK 8GB RAM的比较

Kingston KN2M64-ETB 8GB
Chun Well Technology Holding Limited CL16-18-18 D4-2666 8GB

SK Hynix HMA81GS6JJR8N-VK 8GB RAM的比较

Samsung M378B5673EH1-CF8 2GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Kingston 99U5584-005.A00LF 4GB
Kingston 99U5584-005.A00LF 4GB
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内存RAM
Kingston 9965662-016.A00G 16GB
Kingston 9965662-016.A00G 16GB
SK Hynix HMA851S6CJR6N-XN 4GB
SK Hynix HMA851S6CJR6N-XN 4GB
内存RAM
SK Hynix HYMP164U64CP6-Y5 512MB
SK Hynix HYMP164U64CP6-Y5 512MB
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Kingston 9905700-072.A01G 16GB
内存RAM
Samsung M391B5673EH1-CH9 2GB
Samsung M391B5673EH1-CH9 2GB
Patriot Memory (PDP Systems) 3733 C17 Series 8GB
Patriot Memory (PDP Systems) 3733 C17 Series 8GB
内存RAM
Samsung M3 78T5663RZ3-CF7 2GB
Samsung M3 78T5663RZ3-CF7 2GB
Ramaxel Technology RMUA5110MB78HAF-2400 8GB
Ramaxel Technology RMUA5110MB78HAF-2400 8GB
内存RAM
Samsung M378B5273CH0-CH9 4GB
Samsung M378B5273CH0-CH9 4GB
Micron Technology 8ATF1G64HZ-2G3B1 8GB
Micron Technology 8ATF1G64HZ-2G3B1 8GB
内存RAM
Samsung M393B5270CH0-CH9 4GB
Samsung M393B5270CH0-CH9 4GB
Ramaxel Technology RMSA3270MB76H8F2400 2GB
Ramaxel Technology RMSA3270MB76H8F2400 2GB
内存RAM
Crucial Technology BLS8G3N18AES4.16FE 8GB
Crucial Technology BLS8G3N18AES4.16FE 8GB
Kingston XRMWRN-HYA 16GB
Kingston XRMWRN-HYA 16GB
内存RAM
SK Hynix HMT325U6CFR8C-PB 2GB
SK Hynix HMT325U6CFR8C-PB 2GB
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A-DATA Technology DDR4 2800 8GB
内存RAM
Crucial Technology BLE4G3D1608DE1TX0. 4GB
Crucial Technology BLE4G3D1608DE1TX0. 4GB
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Samsung M393A2K43DB3-CWE 16GB
内存RAM
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Teikon TMA41GU6AFR8N-TFSC 8GB
Teikon TMA41GU6AFR8N-TFSC 8GB
内存RAM
Samsung M471B5173QH0-YK0 4GB
Samsung M471B5173QH0-YK0 4GB
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Hoodisk Electronics Co Ltd NMUD480E81-3200 8GB
内存RAM
Samsung M378B5673EH1-CF8 2GB
Samsung M378B5673EH1-CF8 2GB
Asgard VMA45UG-MEC1U2AW2 8GB
Asgard VMA45UG-MEC1U2AW2 8GB
内存RAM
Crucial Technology CT51264AC800.C16FC 4GB
Crucial Technology CT51264AC800.C16FC 4GB
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