Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C-H9 8GB

Golden Empire CL18-20-20 D4-3600 8GB

Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C-H9 8GB vs Golden Empire CL18-20-20 D4-3600 8GB

总分

Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C-H9 8GB

Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C-H9 8GB

总分

Golden Empire CL18-20-20 D4-3600 8GB

Golden Empire CL18-20-20 D4-3600 8GB

差异规格评论

差异

Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C-H9 8GB

需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C-H9 8GB

报告一个错误

Golden Empire CL18-20-20 D4-3600 8GB

需要考虑的原因
Golden Empire CL18-20-20 D4-3600 8GB

报告一个错误

低于PassMark测试中的延时，ns

28 34

左右 -21% 更低的延时
更快的读取速度，GB/s

17.7 8.6

测试中的平均数值
更快的写入速度，GB/s

15.8 5.8

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C-H9 8GB

Golden Empire CL18-20-20 D4-3600 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

34 28
读取速度，GB/s

8.6 17.7
写入速度，GB/s

5.8 15.8
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1682 3772

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M471A1K43DB1-CTD 8GB

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Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C-H9 8GB

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Corsair CMK16GX4M2Z3600C14 8GB

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InnoDisk Corporation M4SI-8GS1NC0K-C 8GB

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Kingston HP32D4S2S1ME-4 4GB

Kingston KF560C40-16 16GB

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Kingston KHX2666C13/16GX 16GB

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Kingston 9905403-515.A00LF 8GB

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GIGA - BYTE Technology Co Ltd AR32C16S8K2SU416R 8GB

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Samsung M3 78T5663RZ3-CE6 2GB

Micron Technology 16ATF4G64HZ-2G6B2 32GB

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