RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
zh
Русский Русский English English Español Español Português Português Deutsch Deutsch Français Français Italiano Italiano Polski Polski 中文 中文 日本語 日本語
Samsung M3 78T5663RZ3-CE6 2GB
Micron Technology 16ATF4G64HZ-2G6B2 32GB

Samsung M3 78T5663RZ3-CE6 2GB vs Micron Technology 16ATF4G64HZ-2G6B2 32GB

总分
star star star star star
Samsung M3 78T5663RZ3-CE6 2GB

Samsung M3 78T5663RZ3-CE6 2GB

总分
star star star star star
Micron Technology 16ATF4G64HZ-2G6B2 32GB

Micron Technology 16ATF4G64HZ-2G6B2 32GB

差异 规格 评论

差异

Samsung M3 78T5663RZ3-CE6 2GB 需要考虑的原因
Samsung M3 78T5663RZ3-CE6 2GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 15.4
    测试中的平均数值
  • 更快的写入速度，GB/s
    2,168.2 left arrow 11.8
    测试中的平均数值
Micron Technology 16ATF4G64HZ-2G6B2 32GB 需要考虑的原因
Micron Technology 16ATF4G64HZ-2G6B2 32GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    35 left arrow 60
    左右 -71% 更低的延时
  • 更高的内存带宽，mbps
    21300 left arrow 5300
    左右 4.02 更高的带宽

规格

完整的技术规格清单
Samsung M3 78T5663RZ3-CE6 2GB
Micron Technology 16ATF4G64HZ-2G6B2 32GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    60 left arrow 35
  • 读取速度，GB/s
    4,595.2 left arrow 15.4
  • 写入速度，GB/s
    2,168.2 left arrow 11.8
  • 内存带宽，mbps
    5300 left arrow 21300
Other
  • 描述
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
  • 时序/时钟速度
    5-5-5-15 / 667 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    941 left arrow 2926

Samsung M3 78T5663RZ3-CE6 2GB RAM的比较

Samsung M3 78T5663DZ3-CE6 2GB
Kingston 9965640-016.A00G 32GB

Micron Technology 16ATF4G64HZ-2G6B2 32GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BL16G32C16U4B.16FE 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Nanya Technology NT4GC72B4NA1NL-CG 4GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Corsair CMK32GX4M1D3000C16 32GB
Corsair CMK32GX4M1D3000C16 32GB
内存RAM
Samsung M393B1K70QB0-CK0 8GB
Samsung M393B1K70QB0-CK0 8GB
Corsair CMK4GX4M1A2400C14 4GB
Corsair CMK4GX4M1A2400C14 4GB
内存RAM
Samsung M471B5273DH0-CH9 4GB
Samsung M471B5273DH0-CH9 4GB
G Skill Intl F4-2400C15-16GFX 16GB
G Skill Intl F4-2400C15-16GFX 16GB
内存RAM
Samsung M3 78T5663RZ3-CE6 2GB
Samsung M3 78T5663RZ3-CE6 2GB
Micron Technology 16ATF4G64HZ-2G6B2 32GB
Micron Technology 16ATF4G64HZ-2G6B2 32GB
内存RAM
Kingston KHX1600C9D3/4G 4GB
Kingston KHX1600C9D3/4G 4GB
Crucial Technology CT8G4SFS824A.C8FP 8GB
Crucial Technology CT8G4SFS824A.C8FP 8GB
内存RAM
Corsair CML16GX3M2A1600C10 8GB
Corsair CML16GX3M2A1600C10 8GB
Avexir Technologies Corporation DDR4-2800 CL15 4GB 4GB
Avexir Technologies Corporation DDR4-2800 CL15 4GB 4GB
内存RAM
Samsung M3 78T5663RZ3-CE6 2GB
Samsung M3 78T5663RZ3-CE6 2GB
V-GEN D4S8GL30A8TS5 8GB
V-GEN D4S8GL30A8TS5 8GB
内存RAM
Kingston 99U5474-013.A00LF 2GB
Kingston 99U5474-013.A00LF 2GB
SpecTek Incorporated 16G 2666 CL 19 16GB
SpecTek Incorporated 16G 2666 CL 19 16GB
内存RAM
Kingston KHX2800C14D4/8GX 8GB
Kingston KHX2800C14D4/8GX 8GB
Ramaxel Technology RMUA5110KE68H9F-2400 4GB
Ramaxel Technology RMUA5110KE68H9F-2400 4GB
内存RAM
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
SK Hynix HMA84GR7MFR4N-TF 32GB
SK Hynix HMA84GR7MFR4N-TF 32GB
内存RAM
Samsung M393B5270CH0-CH9 4GB
Samsung M393B5270CH0-CH9 4GB
G Skill Intl F4-3200C15-8GTZSW 8GB
G Skill Intl F4-3200C15-8GTZSW 8GB
内存RAM
Kingston 99U5584-005.A00LF 4GB
Kingston 99U5584-005.A00LF 4GB
Samsung M378A1K43BB1-CTD 16GB
Samsung M378A1K43BB1-CTD 16GB
内存RAM
Samsung M395T2863QZ4-CF76 1GB
Samsung M395T2863QZ4-CF76 1GB
Kingston 9965596-023.B01G 8GB
Kingston 9965596-023.B01G 8GB
内存RAM
Crucial Technology BLT2G3D1608DT1TX0 2GB
Crucial Technology BLT2G3D1608DT1TX0 2GB
G Skill Intl F4-3000C15-8GRRB 8GB
G Skill Intl F4-3000C15-8GRRB 8GB
内存RAM