Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C-H9 8GB vs Kingston HP26D4S9S8MHF-8 8GB

总分

Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C-H9 8GB

Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C-H9 8GB

总分

Kingston HP26D4S9S8MHF-8 8GB

Kingston HP26D4S9S8MHF-8 8GB

差异规格评论

差异

Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C-H9 8GB

需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C-H9 8GB

报告一个错误

低于PassMark测试中的延时，ns

34 36

左右 6% 更低的延时

Kingston HP26D4S9S8MHF-8 8GB

需要考虑的原因
Kingston HP26D4S9S8MHF-8 8GB

报告一个错误

更快的读取速度，GB/s

14.8 8.6

测试中的平均数值
更快的写入速度，GB/s

12.0 5.8

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C-H9 8GB

Kingston HP26D4S9S8MHF-8 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

34 36
读取速度，GB/s

8.6 14.8
写入速度，GB/s

5.8 12.0
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1682 2711

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Crucial Technology BLT16G4D30AETA.K16FB 16GB

Crucial Technology BLS8G4D240FSEK.8FD 8GB

Crucial Technology BLS8G4D240FSEK.8FD 8GB

SK Hynix HYMP112U64CP8-S5 1GB

SK Hynix HYMP112U64CP8-S5 1GB

Crucial Technology CT8G4DFD8213.C16FDD2 8GB

Crucial Technology CT8G4DFD8213.C16FDD2 8GB

Kingston 99U5474-023.A00LF 4GB

Kingston 99U5474-023.A00LF 4GB

G Skill Intl F4-3000C15-8GTZR 8GB

G Skill Intl F4-3000C15-8GTZR 8GB

Samsung M393B1G70BH0-CK0 8GB

Samsung M393B1G70BH0-CK0 8GB

SK Hynix HMA42GR7MFR4N-TFTD 16GB

SK Hynix HMA42GR7MFR4N-TFTD 16GB

Samsung M393B2G70BH0-CK0 16GB

Samsung M393B2G70BH0-CK0 16GB

Crucial Technology BLS8G4D32AESTK.M8FE 8GB

Crucial Technology BLS8G4D32AESTK.M8FE 8GB

AMD AE34G1601U1 4GB

AMD AE34G1601U1 4GB

Micron Technology 16ATF4G64HZ-2G6B4 32GB

Micron Technology 16ATF4G64HZ-2G6B4 32GB

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8

Samsung M471A1K43CB1-CTD 8GB

Samsung M471A1K43CB1-CTD 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

InnoDisk Corporation M4S0-4GSSNCSJ 4GB

InnoDisk Corporation M4S0-4GSSNCSJ 4GB

Corsair CM3X8GA2400C11Y2R 8GB

Corsair CM3X8GA2400C11Y2R 8GB

Gloway International Co. Ltd. TYA4U2400D17081C 8GB

Gloway International Co. Ltd. TYA4U2400D17081C 8GB

SK Hynix HYMP112U64CP8-S5 1GB

SK Hynix HYMP112U64CP8-S5 1GB

Kingston 9965604-008.C00G 8GB

Kingston 9965604-008.C00G 8GB

Transcend Information TS512MSK64W6H 4GB

Transcend Information TS512MSK64W6H 4GB

Crucial Technology BLS16G4D240FSC.16FAD 16GB

Crucial Technology BLS16G4D240FSC.16FAD 16GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Crucial Technology BLS16G4S26BFSD.16FBD 16GB

Crucial Technology BLS16G4S26BFSD.16FBD 16GB

SK Hynix HYMP164U64CP6-Y5 512MB

SK Hynix HYMP164U64CP6-Y5 512MB

Samsung M391A1G43DB0-CPB 8GB

Samsung M391A1G43DB0-CPB 8GB

Kingston HX318C10FK/4 4GB

Kingston HX318C10FK/4 4GB

Samsung M391A1G43EB1-CPB 8GB

Samsung M391A1G43EB1-CPB 8GB