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Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
Eudar Technology Inc. 8GXMP3000CL16 8GB
比较
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB vs Eudar Technology Inc. 8GXMP3000CL16 8GB
总分
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
总分
Eudar Technology Inc. 8GXMP3000CL16 8GB
差异
规格
评论
差异
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
报告一个错误
低于PassMark测试中的延时,ns
28
73
左右 62% 更低的延时
更快的写入速度,GB/s
9.6
8.5
测试中的平均数值
需要考虑的原因
Eudar Technology Inc. 8GXMP3000CL16 8GB
报告一个错误
更快的读取速度,GB/s
14.7
12.4
测试中的平均数值
更高的内存带宽,mbps
19200
12800
左右 1.5 更高的带宽
规格
完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
Eudar Technology Inc. 8GXMP3000CL16 8GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
28
73
读取速度,GB/s
12.4
14.7
写入速度,GB/s
9.6
8.5
内存带宽,mbps
12800
19200
Other
描述
PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度
9-9-9-24 / 1600 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
2329
1712
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB RAM的比较
Crucial Technology BLS8G3N18AES4.16FE 8GB
Nanya Technology NT4GC64B8HD0NS-CG 4GB
Eudar Technology Inc. 8GXMP3000CL16 8GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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Gold Key Technology Co Ltd NMUD480E82-3200E 8GB
Kingston ACR256X64D3S1333C9 2GB
Micron Technology 9ASF1G72PZ-2G6D1 8GB
takeMS International AG TMS2GB264D082-805G 2GB
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Kingston 9905713-028.A00G 8GB
Kingston 99U5471-037.A00LF 8GB
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Corsair CMD8GX3M2A2933C12 4GB
Crucial Technology BLS16G4D26BFSB.16FBR 16GB
Samsung M386B4G70DM0-CMA4 32GB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6CJR8N
报告一个错误
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