RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
Eudar Technology Inc. 8GXMP3000CL16 8GB
Compare
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB vs Eudar Technology Inc. 8GXMP3000CL16 8GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
Overall score
Eudar Technology Inc. 8GXMP3000CL16 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
Report a bug
Below the latency in the PassMark tests, ns
28
73
Around 62% lower latency
Faster write speed, GB/s
9.6
8.5
Average value in the tests
Reasons to consider
Eudar Technology Inc. 8GXMP3000CL16 8GB
Report a bug
Faster reading speed, GB/s
14.7
12.4
Average value in the tests
Higher memory bandwidth, mbps
19200
12800
Around 1.5 higher bandwidth
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
Eudar Technology Inc. 8GXMP3000CL16 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
28
73
Read speed, GB/s
12.4
14.7
Write speed, GB/s
9.6
8.5
Memory bandwidth, mbps
12800
19200
Other
Description
PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
9-9-9-24 / 1600 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
2329
1712
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB RAM comparisons
Crucial Technology BLS8G3N18AES4.16FE 8GB
Nanya Technology NT4GC64B8HD0NS-CG 4GB
Eudar Technology Inc. 8GXMP3000CL16 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A
Kingston 9905665-009.A00G 4GB
Samsung M3 78T5663RZ3-CE6 2GB
Crucial Technology BL8G32C16U4R.M8FE1 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A
Eudar Technology Inc. 8GXMP3000CL16 8GB
Corsair CMV4GX3M1B1600C11 4GB
Crucial Technology BLS8G4D240FSB.16FBD 8GB
takeMS International AG TMS2GB264D082-805G 2GB
Roa Logic BV iGame DDR4 8G 3000 8GB
Samsung M393B2G70BH0-CH9 16GB
G Skill Intl F4-4266C19-4GTZ 4GB
TwinMOS 8DHE3MN8-HATP 2GB
Crucial Technology CT16G4SFS832A.M8FE 16GB
Hexon Technology Pte Ltd HEXON 1GB
Kllisre M378A5143EB2-CRC 4GB
Crucial Technology CT25664BA160B.C16F 2GB
Kingston KCDT82-MIE 4GB
Corsair CM2X1024-6400C4 1GB
SK Hynix HMA82GU6DJR8N-VK 16GB
Ramaxel Technology RMT3020EC58E9F1333 4GB
G Skill Intl F4-3000C16-8GSXWB 8GB
Kingston 9965525-018.A00LF 4GB
Crucial Technology CT8G4DFS832A.M8FR 8GB
Kingston 9905403-447.A00LF 4GB
Essencore Limited IM48GU88N24-FFFHA0 8GB
Team Group Inc. Team-Elite-1333 4GB
Micron Technology V-GeN D4V16GL24A8R 16GB
Report a bug
×
Bug description
Source link