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Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A-PB 8GB
Micron Technology 16ATF2G64HZ-2G1B1 16GB
比较
Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A-PB 8GB vs Micron Technology 16ATF2G64HZ-2G1B1 16GB
总分
Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A-PB 8GB
总分
Micron Technology 16ATF2G64HZ-2G1B1 16GB
差异
规格
评论
差异
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A-PB 8GB
报告一个错误
低于PassMark测试中的延时,ns
29
36
左右 19% 更低的延时
需要考虑的原因
Micron Technology 16ATF2G64HZ-2G1B1 16GB
报告一个错误
更快的读取速度,GB/s
13.9
12.1
测试中的平均数值
更快的写入速度,GB/s
10.1
7.8
测试中的平均数值
更高的内存带宽,mbps
17000
12800
左右 1.33 更高的带宽
规格
完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A-PB 8GB
Micron Technology 16ATF2G64HZ-2G1B1 16GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
29
36
读取速度,GB/s
12.1
13.9
写入速度,GB/s
7.8
10.1
内存带宽,mbps
12800
17000
Other
描述
PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度
9-9-9-24 / 1600 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
2177
2581
Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A-PB 8GB RAM的比较
G Skill Intl F3-12800CL9-4GBRL 4GB
Avant Technology W644GU44J2320NH 32GB
Micron Technology 16ATF2G64HZ-2G1B1 16GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M3 93T5750CZA-CE6 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Kingston 99U5474-028.A00LF 4GB
Panram International Corporation PUD42400C154GNJW 4GB
ASint Technology SSA302G08-EGN1C 4GB
Corsair CM4X8GD3000C16K4 8GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
Transcend Information JM2400HSB-8G 8GB
Crucial Technology CT51264BD1339.M16F 4GB
Super Talent F26UB16GH 16GB
Crucial Technology CT51264BD1339.M16F 4GB
Golden Empire CL17-17-17 D4-2400 16GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Corsair CM4B16G2L2666A18K2 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
INTENSO 5641162 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Crucial Technology BL8G26C16U4W.8FD 8GB
SK Hynix HYMP112U64CP8-S5 1GB
Crucial Technology BLT8G4D30AET4K.M8FE1 8GB
EVGA 16G-D3-1600-MR 8GB
Lexar Co Limited LD4AU016G-H3200GST 16GB
Corsair CMSX4GX3M1A1600C9 4GB
Micron Technology 8ATF51264AZ-2G1A2 4GB
Kingston KHX2133C11D3/4GX 4GB
Avexir Technologies Corporation DDR4-3000 CL15 4GB 4GB
Samsung M378A5244CB0-CTD 4GB
Century Micro Inc. CENTURY JAPAN MEMORY 8GB
Samsung M378B5773CH0-CH9 2GB
Corsair CMK16GX4M1C3000C16 16GB
报告一个错误
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Bug description
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