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Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
Chun Well Technology Holding Limited CL18-20-20 D4-3600 8GB
比较
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB vs Chun Well Technology Holding Limited CL18-20-20 D4-3600 8GB
总分
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
总分
Chun Well Technology Holding Limited CL18-20-20 D4-3600 8GB
差异
规格
评论
差异
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
报告一个错误
需要考虑的原因
Chun Well Technology Holding Limited CL18-20-20 D4-3600 8GB
报告一个错误
低于PassMark测试中的延时,ns
27
29
左右 -7% 更低的延时
更快的读取速度,GB/s
19.1
13.4
测试中的平均数值
更快的写入速度,GB/s
16.2
9.0
测试中的平均数值
更高的内存带宽,mbps
17000
12800
左右 1.33 更高的带宽
规格
完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
Chun Well Technology Holding Limited CL18-20-20 D4-3600 8GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
29
27
读取速度,GB/s
13.4
19.1
写入速度,GB/s
9.0
16.2
内存带宽,mbps
12800
17000
Other
描述
PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
PC4-17000, 1.2V, CAS Supported: 14 15 16
时序/时钟速度
9-9-9-24 / 1600 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
2423
3784
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB RAM的比较
Hynix Semiconductor (Hyundai Electronics) HMT451U6BFR8C-PB 4GB
Corsair CMW16GX4M2Z4000C18 8GB
Chun Well Technology Holding Limited CL18-20-20 D4-3600 8GB RAM的比较
G Skill Intl F5-6000J3636F16G 16GB
G Skill Intl F2-8500CL5-2GBPI 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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Kingston 9905403-003.B00LF 4GB
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Corsair CMW16GX4M2Z3200C16 8GB
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Corsair CMT32GX4M4K4000C19 8GB
Kingston KHX1600C9D3/8G 8GB
Crucial Technology CT8G4SFS632A 8GB
Samsung M471A1G44AB0-CWE 8GB
G Skill Intl F4-4800C19-8GTESC 8GB
Essencore Limited KD48GU88C-26N1600 8GB
Hoodisk Electronics Co Ltd GKE400UD51208-2400AH 4GB
报告一个错误
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Bug description
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