Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB vs Kingston XRMWRN-MIE 16GB

总分

Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB

总分

Kingston XRMWRN-MIE 16GB

Kingston XRMWRN-MIE 16GB

差异规格评论

差异

Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB

需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB

报告一个错误

低于PassMark测试中的延时，ns

29 31

左右 6% 更低的延时

Kingston XRMWRN-MIE 16GB

需要考虑的原因
Kingston XRMWRN-MIE 16GB

报告一个错误

更快的读取速度，GB/s

16.7 13.4

测试中的平均数值
更快的写入速度，GB/s

14.1 9.0

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB

Kingston XRMWRN-MIE 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

29 31
读取速度，GB/s

13.4 16.7
写入速度，GB/s

9.0 14.1
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2423 3402

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Samsung M471A5244CB0-CWE 4GB

Samsung M471A5244CB0-CWE 4GB

Kingston 9905599-026.A00G 8GB

Kingston 9905599-026.A00G 8GB

Corsair CMK16GX4M2B3000C15 8GB

Corsair CMK16GX4M2B3000C15 8GB

Corsair CMT16GX4M2C3600C18 8GB

Corsair CMT16GX4M2C3600C18 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C

Kingston XRMWRN-MIE 16GB

Kingston XRMWRN-MIE 16GB

Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

Crucial Technology CT8G4SFRA32A.C8FE 8GB

Crucial Technology CT8G4SFRA32A.C8FE 8GB

SK Hynix HYMP112S64CP6-S6 1GB

SK Hynix HYMP112S64CP6-S6 1GB

Kingston 9905630-007.A00G 8GB

Kingston 9905630-007.A00G 8GB

Nanya Technology NT2GT64U8HD0BN-AD 2GB

Nanya Technology NT2GT64U8HD0BN-AD 2GB

Crucial Technology BLS16G4D30AESE.M16FE 16GB

Crucial Technology BLS16G4D30AESE.M16FE 16GB

Kingston 99U5474-028.A00LF 4GB

Kingston 99U5474-028.A00LF 4GB

Gloway International (HK) STK2133C15-8GB 8GB

Gloway International (HK) STK2133C15-8GB 8GB

Crucial Technology CT25664BA160B.C16F 2GB

Crucial Technology CT25664BA160B.C16F 2GB

G Skill Intl F4-3000C15-4GRR 4GB

G Skill Intl F4-3000C15-4GRR 4GB

Samsung M393B1G70QH0-YK0 8GB

Samsung M393B1G70QH0-YK0 8GB

Hynix Semiconductor (Hyundai Electronics) GKE800SO51208-2400AH 8GB

Hynix Semiconductor (Hyundai Electronics) GKE800SO51208

A-DATA Technology ADOVE1A0834E 1GB

A-DATA Technology ADOVE1A0834E 1GB

Kingston XN205T-MIE2 16GB

Kingston XN205T-MIE2 16GB

Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

Kingston 8ATF1G64AZ-2G3A1 8GB

Kingston 8ATF1G64AZ-2G3A1 8GB

Kingston 9905469-124.A00LF 4GB

Kingston 9905469-124.A00LF 4GB

Patriot Memory (PDP Systems) 4400 C18 Series 8GB

Patriot Memory (PDP Systems) 4400 C18 Series 8GB

Kingston 99U5458-008.A00LF 4GB

Kingston 99U5458-008.A00LF 4GB

Corsair CM4B8G1L2666A18S4 8GB

Corsair CM4B8G1L2666A18S4 8GB

SK Hynix HMT151R7TFR4C-H9 4GB

SK Hynix HMT151R7TFR4C-H9 4GB

G Skill Intl F4-4133C19-8GTZC 8GB

G Skill Intl F4-4133C19-8GTZC 8GB