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Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C-G7 2GB
G Skill Intl F4-3200C14-16GTZR 16GB

Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C-G7 2GB vs G Skill Intl F4-3200C14-16GTZR 16GB

总分
star star star star star
Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C-G7 2GB

Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C-G7 2GB

总分
star star star star star
G Skill Intl F4-3200C14-16GTZR 16GB

G Skill Intl F4-3200C14-16GTZR 16GB

差异 规格 评论

差异

Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C-G7 2GB 需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C-G7 2GB
报告一个错误
G Skill Intl F4-3200C14-16GTZR 16GB 需要考虑的原因
G Skill Intl F4-3200C14-16GTZR 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    26 left arrow 28
    左右 -8% 更低的延时
  • 更快的读取速度，GB/s
    19.1 left arrow 10.9
    测试中的平均数值
  • 更快的写入速度，GB/s
    15.9 left arrow 7.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 8500
    左右 2 更高的带宽

规格

完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C-G7 2GB
G Skill Intl F4-3200C14-16GTZR 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    28 left arrow 26
  • 读取速度，GB/s
    10.9 left arrow 19.1
  • 写入速度，GB/s
    7.1 left arrow 15.9
  • 内存带宽，mbps
    8500 left arrow 17000
Other
  • 描述
    PC3-8500, 1.5V, CAS Supported: 6 7 8 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    7-7-7-20 / 1066 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    1668 left arrow 3876

Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C-G7 2GB RAM的比较

SK Hynix HMT351S6AFR8C-G7 4GB
Corsair CMK16GX4M4B3200C16 4GB

G Skill Intl F4-3200C14-16GTZR 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
A-DATA Technology VDQVE1B16 2GB
RAM Latency Calculator
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