Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C-G7 2GB

G Skill Intl F4-3600C19-8GTZRB 8GB

Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C-G7 2GB vs G Skill Intl F4-3600C19-8GTZRB 8GB

总分

Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C-G7 2GB

Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C-G7 2GB

总分

G Skill Intl F4-3600C19-8GTZRB 8GB

G Skill Intl F4-3600C19-8GTZRB 8GB

差异规格评论

差异

Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C-G7 2GB

需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C-G7 2GB

报告一个错误

低于PassMark测试中的延时，ns

28 29

左右 3% 更低的延时

G Skill Intl F4-3600C19-8GTZRB 8GB

需要考虑的原因
G Skill Intl F4-3600C19-8GTZRB 8GB

报告一个错误

更快的读取速度，GB/s

18.2 10.9

测试中的平均数值
更快的写入速度，GB/s

16.1 7.1

测试中的平均数值
更高的内存带宽，mbps

17000 8500

左右 2 更高的带宽

规格

完整的技术规格清单

Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C-G7 2GB

G Skill Intl F4-3600C19-8GTZRB 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

28 29
读取速度，GB/s

10.9 18.2
写入速度，GB/s

7.1 16.1
内存带宽，mbps

8500 17000

Other

描述

PC3-8500, 1.5V, CAS Supported: 6 7 8 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1066 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1668 3748

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Samsung M3 78T2863EHS-CF7 1GB

Crucial Technology BLE4G4D26AFEA.8FAD 4GB

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Kingston KVT8FP-HYC 4GB

Kingston KVT8FP-HYC 4GB

Galaxy Microsystems Ltd. GOC2017-Fugger 8GB

Galaxy Microsystems Ltd. GOC2017-Fugger 8GB

Corsair CMX4GX3M2A1600C9 2GB

Corsair CMX4GX3M2A1600C9 2GB

SK Hynix HMA851S6CJR6N-UH 4GB

SK Hynix HMA851S6CJR6N-UH 4GB

Kingston KP223C-ELD 2GB

Kingston KP223C-ELD 2GB

Super Talent F24SB8GH 8GB

Super Talent F24SB8GH 8GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Transcend Information TS2GSH64V6B 16GB

Transcend Information TS2GSH64V6B 16GB

Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C-G7 2GB

Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C

G Skill Intl F4-3600C19-8GTZRB 8GB

G Skill Intl F4-3600C19-8GTZRB 8GB

G Skill Intl F5-6400J3239G16G 16GB

G Skill Intl F5-6400J3239G16G 16GB

Patriot Memory (PDP Systems) 2400 C15 Series 4GB

Patriot Memory (PDP Systems) 2400 C15 Series 4GB

Kingston 99U5458-008.A00LF 4GB

Kingston 99U5458-008.A00LF 4GB

Avexir Technologies Corporation DDR4-2666 CL17 8GB 8GB

Avexir Technologies Corporation DDR4-2666 CL17 8GB 8GB

Kingston 9965525-018.A00LF 4GB

Kingston 9965525-018.A00LF 4GB

Kingston 9905700-024.A00G 8GB

Kingston 9905700-024.A00G 8GB

G Skill Intl F4-3200C16-8GIS 8GB

G Skill Intl F4-3200C16-8GIS 8GB

G Skill Intl F4-3600C18-16GTZN 16GB

G Skill Intl F4-3600C18-16GTZN 16GB

Samsung M471A5244CB0-CWE 4GB

Samsung M471A5244CB0-CWE 4GB

Heoriady HX2666CX15D4/4G 4GB

Heoriady HX2666CX15D4/4G 4GB

AMD AE34G1601U1 4GB

AMD AE34G1601U1 4GB

Wilk Elektronik S.A. GR2133D464L15S/4G 4GB

Wilk Elektronik S.A. GR2133D464L15S/4G 4GB

Nanya Technology NT2GT64U8HD0BY-AD 2GB

Nanya Technology NT2GT64U8HD0BY-AD 2GB

Kingston 9965643-006.A01G 8GB

Kingston 9965643-006.A01G 8GB

A-DATA Technology DQKD1A08 1GB

A-DATA Technology DQKD1A08 1GB

G Skill Intl F4-4000C18-8GTZRB 8GB

G Skill Intl F4-4000C18-8GTZRB 8GB