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Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C-G7 2GB
Mushkin 99[2/7/4]192[F/T] 4GB

Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C-G7 2GB vs Mushkin 99[2/7/4]192[F/T] 4GB

总分
star star star star star
Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C-G7 2GB

Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C-G7 2GB

总分
star star star star star
Mushkin 99[2/7/4]192[F/T] 4GB

Mushkin 99[2/7/4]192[F/T] 4GB

差异 规格 评论

差异

Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C-G7 2GB 需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C-G7 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    28 left arrow 65
    左右 57% 更低的延时
Mushkin 99[2/7/4]192[F/T] 4GB 需要考虑的原因
Mushkin 99[2/7/4]192[F/T] 4GB
报告一个错误
  • 更快的读取速度，GB/s
    15.8 left arrow 10.9
    测试中的平均数值
  • 更快的写入速度，GB/s
    8.5 left arrow 7.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 8500
    左右 2 更高的带宽

规格

完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C-G7 2GB
Mushkin 99[2/7/4]192[F/T] 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    28 left arrow 65
  • 读取速度，GB/s
    10.9 left arrow 15.8
  • 写入速度，GB/s
    7.1 left arrow 8.5
  • 内存带宽，mbps
    8500 left arrow 17000
Other
  • 描述
    PC3-8500, 1.5V, CAS Supported: 6 7 8 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
  • 时序/时钟速度
    7-7-7-20 / 1066 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    1668 left arrow 1932

Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C-G7 2GB RAM的比较

SK Hynix HMT351S6AFR8C-G7 4GB
Corsair CMK16GX4M4B3200C16 4GB

Mushkin 99[2/7/4]192[F/T] 4GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
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