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Hynix Semiconductor (Hyundai Electronics) HMT351S6
G Skill Intl F4-3200C16-16GTZSK 16GB

Hynix Semiconductor (Hyundai Electronics) HMT351S6 vs G Skill Intl F4-3200C16-16GTZSK 16GB

总分
star star star star star
Hynix Semiconductor (Hyundai Electronics) HMT351S6

Hynix Semiconductor (Hyundai Electronics) HMT351S6

总分
star star star star star
G Skill Intl F4-3200C16-16GTZSK 16GB

G Skill Intl F4-3200C16-16GTZSK 16GB

差异 规格 评论

差异

Hynix Semiconductor (Hyundai Electronics) HMT351S6 需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMT351S6
报告一个错误
  • 低于PassMark测试中的延时，ns
    30 left arrow 35
    左右 14% 更低的延时
G Skill Intl F4-3200C16-16GTZSK 16GB 需要考虑的原因
G Skill Intl F4-3200C16-16GTZSK 16GB
报告一个错误
  • 更快的读取速度，GB/s
    15.9 left arrow 8.6
    测试中的平均数值
  • 更快的写入速度，GB/s
    11.7 left arrow 5.4
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) HMT351S6
G Skill Intl F4-3200C16-16GTZSK 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    30 left arrow 35
  • 读取速度，GB/s
    8.6 left arrow 15.9
  • 写入速度，GB/s
    5.4 left arrow 11.7
  • 内存带宽，mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    1344 left arrow 3147

Hynix Semiconductor (Hyundai Electronics) HMT351S6 RAM的比较

Samsung M471B5273CH0-CH9 4GB
G Skill Intl F4-2666C15-8GRR 8GB

G Skill Intl F4-3200C16-16GTZSK 16GB RAM的比较

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Kingston ACR512X64D3S13C9G 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Hynix Semiconductor (Hyundai Electronics) HMT351S6
Hynix Semiconductor (Hyundai Electronics) HMT351S6
G Skill Intl F4-3200C16-16GTZSK 16GB
G Skill Intl F4-3200C16-16GTZSK 16GB
内存RAM
Kingston KHX318C10FR/8G 8GB
Kingston KHX318C10FR/8G 8GB
Kingston 9965669-005.A01G 16GB
Kingston 9965669-005.A01G 16GB
内存RAM
Elpida EBJ41UF8BDU5-GN-F 4GB
Elpida EBJ41UF8BDU5-GN-F 4GB
G Skill Intl F4-2933C14-16GFX 16GB
G Skill Intl F4-2933C14-16GFX 16GB
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AMD R5S38G1601U2S 8GB
AMD R5S38G1601U2S 8GB
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Kingston 9905678-042.A00G 8GB
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Kingston 9965525-140.A00LF 8GB
A-DATA Technology DDR4 3000 8GB
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TwinMOS 8DHE3MN8-HATP 2GB
Corsair CMK128GX4M4E3200C16 32GB
Corsair CMK128GX4M4E3200C16 32GB
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Samsung M393B5170FH0-CH9 4GB
Samsung M393B5170FH0-CH9 4GB
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Corsair CMK64GX4M4B3333C16 16GB
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Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
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Kingston KHX2133C13S4/8G 8GB
内存RAM
Crucial Technology CT51264BA1339.C16F 4GB
Crucial Technology CT51264BA1339.C16F 4GB
Corsair CMG16GX4M2E3200C16 8GB
Corsair CMG16GX4M2E3200C16 8GB
内存RAM
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Kingston 9905700-024.A00G 8GB
内存RAM
SK Hynix HMT41GU7MFR8A-H9 8GB
SK Hynix HMT41GU7MFR8A-H9 8GB
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Corsair CMU16GX4M2D3200C16 8GB
内存RAM
Swissbit MEU25664D6BC2EP-30 2GB
Swissbit MEU25664D6BC2EP-30 2GB
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Kingston 9905624-033.A00G 8GB
内存RAM
Samsung M393B1K70CH0-YH9 8GB
Samsung M393B1K70CH0-YH9 8GB
Kingston KHX3200C20S4/16G 16GB
Kingston KHX3200C20S4/16G 16GB
内存RAM
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
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Kingston ACR26D4S9S8ME-8 8GB
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