Hynix Semiconductor (Hyundai Electronics) HMT351S6 vs Transcend Information TS512MLH64V1H 4GB

总分

Hynix Semiconductor (Hyundai Electronics) HMT351S6

Hynix Semiconductor (Hyundai Electronics) HMT351S6

总分

Transcend Information TS512MLH64V1H 4GB

Transcend Information TS512MLH64V1H 4GB

差异规格评论

差异

Hynix Semiconductor (Hyundai Electronics) HMT351S6

需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMT351S6

报告一个错误

Transcend Information TS512MLH64V1H 4GB

需要考虑的原因
Transcend Information TS512MLH64V1H 4GB

报告一个错误

低于PassMark测试中的延时，ns

23 30

左右 -30% 更低的延时
更快的读取速度，GB/s

16.4 8.6

测试中的平均数值
更快的写入速度，GB/s

11.7 5.4

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Hynix Semiconductor (Hyundai Electronics) HMT351S6

Transcend Information TS512MLH64V1H 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

30 23
读取速度，GB/s

8.6 16.4
写入速度，GB/s

5.4 11.7
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1344 2575

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Crucial Technology BLS8G4D26BFSC.16FE 8GB

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Hynix Semiconductor (Hyundai Electronics) HMT351S6

Hynix Semiconductor (Hyundai Electronics) HMT351S6

Transcend Information TS512MLH64V1H 4GB

Transcend Information TS512MLH64V1H 4GB

G Skill Intl F3-2133C9-4GAB 4GB

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Corsair CMU16GX4M2D3200C16 8GB

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Crucial Technology CT8G4DFD824A.M16FF 8GB

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Kingston ACR16D3LS1KNG/8G 8GB

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SK Hynix HYMP31GF72CMP4D5Y5 8GB

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