RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C-H9 4GB
AMD R748G2606U2S 8GB
比较
Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C-H9 4GB vs AMD R748G2606U2S 8GB
总分
Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C-H9 4GB
总分
AMD R748G2606U2S 8GB
差异
规格
评论
差异
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C-H9 4GB
报告一个错误
低于PassMark测试中的延时,ns
30
61
左右 51% 更低的延时
需要考虑的原因
AMD R748G2606U2S 8GB
报告一个错误
更快的读取速度,GB/s
15
8.8
测试中的平均数值
更快的写入速度,GB/s
8.9
5.6
测试中的平均数值
更高的内存带宽,mbps
19200
10600
左右 1.81 更高的带宽
规格
完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C-H9 4GB
AMD R748G2606U2S 8GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
30
61
读取速度,GB/s
8.8
15.0
写入速度,GB/s
5.6
8.9
内存带宽,mbps
10600
19200
Other
描述
PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度
7-7-7-20 / 1333 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
1344
2028
Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C-H9 4GB RAM的比较
Samsung M471B5273CH0-CH9 4GB
G Skill Intl F4-4000C17-8GTZRB 8GB
AMD R748G2606U2S 8GB RAM的比较
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C
AMD R748G2606U2S 8GB
Kreton Corporation 51624xxxx68x35xxxx 2GB
Team Group Inc. TEAMGROUP-D4-3600 4GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
Corsair CMK8GX4M1A2666C16 8GB
Kingston 9905403-090.A01LF 4GB
Crucial Technology CT8G4SFD824A.C16FBD2 8GB
Samsung M393B1K70DH0-CH9 8GB
Samsung M393B1K70DH0-CK0 8GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Crucial Technology BLS4G4S240FSD.M8FADM 4GB
Elpida EBJ21UE8BDF0-DJ-F 2GB
Samsung SH5724G4UNC26P2-SC 32GB
SK Hynix HMT351U6CFR8C-H9 4GB
Corsair CMD8GX4M2B3200C16 4GB
Qimonda 72T128420EFA3SB2 1GB
Kingston 9905711-015.A00G 4GB
G Skill Intl F3-2133C9-4GAB 4GB
V-Color Technology Inc. TL8G36818C-I2PSAAS 8GB
Samsung M471B5173QH0-YK0 4GB
Kingston 9905665-021.A00G 4GB
SK Hynix HYMP125S64CP8-S6 2GB
Kingston ACR26D4S9D8MD-16 16GB
Crucial Technology CT102464BF160B-16F 8GB
Micron Technology 16ATF2G64HZ-2G1A1 16GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Chun Well Technology Holding Limited CL19-19-19 D4-2666
报告一个错误
×
Bug description
Source link