Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

Corsair CMK16GX4M2B3000C15 8GB

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB vs Corsair CMK16GX4M2B3000C15 8GB

总分

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

总分

Corsair CMK16GX4M2B3000C15 8GB

Corsair CMK16GX4M2B3000C15 8GB

差异规格评论

差异

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

报告一个错误

更快的读取速度，GB/s

3 17.9

测试中的平均数值

Corsair CMK16GX4M2B3000C15 8GB

需要考虑的原因
Corsair CMK16GX4M2B3000C15 8GB

报告一个错误

低于PassMark测试中的延时，ns

29 65

左右 -124% 更低的延时
更快的写入速度，GB/s

13.8 1,592.0

测试中的平均数值
更高的内存带宽，mbps

17000 5300

左右 3.21 更高的带宽

规格

完整的技术规格清单

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

Corsair CMK16GX4M2B3000C15 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

65 29
读取速度，GB/s

3,580.8 17.9
写入速度，GB/s

1,592.0 13.8
内存带宽，mbps

5300 17000

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 667 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

572 3336

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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A-DATA Technology ADOVE1A0834E 1GB

G Skill Intl F4-4200C19-4GTZ 4GB

G Skill Intl F4-4200C19-4GTZ 4GB

Samsung M3 78T2863EHS-CF7 1GB

Samsung M3 78T2863EHS-CF7 1GB

Kingston 9905599-010.A00G 4GB

Kingston 9905599-010.A00G 4GB

Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

SK Hynix HMA82GS6DJR8N-XN 16GB

SK Hynix HMA82GS6DJR8N-XN 16GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Crucial Technology CT8G4DFRA266.C8FB 8GB

Crucial Technology CT8G4DFRA266.C8FB 8GB

Kingston 99U5429-007.A00LF 2GB

Kingston 99U5429-007.A00LF 2GB

Hynix Semiconductor (Hyundai Electronics) HMA82GU6JJR8N-VK 16GB

Hynix Semiconductor (Hyundai Electronics) HMA82GU6JJR8N

G Skill Intl F3-10600CL9-2GBNT 2GB

G Skill Intl F3-10600CL9-2GBNT 2GB

V-GEN D4S4GL32A16TS 4GB

V-GEN D4S4GL32A16TS 4GB

Kingston 9905458-017.A01LF 4GB

Kingston 9905458-017.A01LF 4GB

Crucial Technology BL16G32C16U4RL.M8FB1 16GB

Crucial Technology BL16G32C16U4RL.M8FB1 16GB

Samsung M378B5173BH0-CH9 4GB

Samsung M378B5173BH0-CH9 4GB

G Skill Intl F4-3200C16-4GTZB 4GB

G Skill Intl F4-3200C16-4GTZB 4GB

Lexar Co Limited LD4AU016G-H3200GST 16GB

Lexar Co Limited LD4AU016G-H3200GST 16GB

Kingston 9905701-098.A00G 16GB

Kingston 9905701-098.A00G 16GB

AMD R5316G1609U2K 8GB

AMD R5316G1609U2K 8GB

G Skill Intl F4-4600C18-8GTZR 8GB

G Skill Intl F4-4600C18-8GTZR 8GB

Kingston 99U5584-001.A00LF 4GB

Kingston 99U5584-001.A00LF 4GB

Kingston 9905678-041.A00G 4GB

Kingston 9905678-041.A00G 4GB

Kingston 9905469-143.A00LF 4GB

Kingston 9905469-143.A00LF 4GB

G Skill Intl F4-2666C18-16GRS 16GB

G Skill Intl F4-2666C18-16GRS 16GB

Crucial Technology CT51264BD160B.C16F 4GB

Crucial Technology CT51264BD160B.C16F 4GB

Crucial Technology CT4G4DFS8213.C8FADP 4GB

Crucial Technology CT4G4DFS8213.C8FADP 4GB

PUSKILL DDR3 1600 8G 8GB

PUSKILL DDR3 1600 8G 8GB

InnoDisk Corporation M4S0-4GSSNCSJ 4GB

InnoDisk Corporation M4S0-4GSSNCSJ 4GB