Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

G Skill Intl F4-2933C16-16GTZRX 16GB

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB vs G Skill Intl F4-2933C16-16GTZRX 16GB

总分

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

总分

G Skill Intl F4-2933C16-16GTZRX 16GB

G Skill Intl F4-2933C16-16GTZRX 16GB

差异规格评论

差异

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

报告一个错误

更快的读取速度，GB/s

3 16.7

测试中的平均数值

G Skill Intl F4-2933C16-16GTZRX 16GB

需要考虑的原因
G Skill Intl F4-2933C16-16GTZRX 16GB

报告一个错误

低于PassMark测试中的延时，ns

22 65

左右 -195% 更低的延时
更快的写入速度，GB/s

13.4 1,592.0

测试中的平均数值
更高的内存带宽，mbps

17000 5300

左右 3.21 更高的带宽

规格

完整的技术规格清单

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

G Skill Intl F4-2933C16-16GTZRX 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

65 22
读取速度，GB/s

3,580.8 16.7
写入速度，GB/s

1,592.0 13.4
内存带宽，mbps

5300 17000

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 667 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

572 3188

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8

G Skill Intl F4-2933C16-16GTZRX 16GB

G Skill Intl F4-2933C16-16GTZRX 16GB

Samsung M3 78T2953EZ3-CF7 1GB

Samsung M3 78T2953EZ3-CF7 1GB

G Skill Intl F4-3000C14-16GTZR 16GB

G Skill Intl F4-3000C14-16GTZR 16GB

SK Hynix HYMP164U64CP6-Y5 512MB

SK Hynix HYMP164U64CP6-Y5 512MB

Corsair CMD32GX4M4C3200C16 8GB

Corsair CMD32GX4M4C3200C16 8GB

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

Smart Modular SF464128CK8I6GKSEG 4GB

Smart Modular SF464128CK8I6GKSEG 4GB

Samsung M378B5673FH0-CH9 2GB

Samsung M378B5673FH0-CH9 2GB

Micron Technology 8ATF1G64HZ-2G6D1 8GB

Micron Technology 8ATF1G64HZ-2G6D1 8GB

Samsung M378B5273CH0-CH9 4GB

Samsung M378B5273CH0-CH9 4GB

Micron Technology 9ASF1G72AZ-2G3B1 8GB

Micron Technology 9ASF1G72AZ-2G3B1 8GB

Samsung M393B1G70BH0-CK0 8GB

Samsung M393B1G70BH0-CK0 8GB

Patriot Memory (PDP Systems) PSD44G266682 4GB

Patriot Memory (PDP Systems) PSD44G266682 4GB

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

Crucial Technology CT8G4DFD8213.C16FAD1 8GB

Crucial Technology CT8G4DFD8213.C16FAD1 8GB

Samsung M378A1G43DB0-CPB 8GB

Samsung M378A1G43DB0-CPB 8GB

Kingston KHX2666C15D4/4G 4GB

Kingston KHX2666C15D4/4G 4GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Crucial Technology CT8G4DFRA266.M4FE 8GB

Crucial Technology CT8G4DFRA266.M4FE 8GB

Samsung M393B1G70BH0-YK0 8GB

Samsung M393B1G70BH0-YK0 8GB

SK Hynix HMAA1GU6CJR6N-XN 8GB

SK Hynix HMAA1GU6CJR6N-XN 8GB

Samsung M471B5273DH0-CK0 4GB

Samsung M471B5273DH0-CK0 4GB

Samsung M471B5173EB0-YK0 4GB

Samsung M471B5173EB0-YK0 4GB

Nanya Technology M2X4G64CB8HG5N-DG 4GB

Nanya Technology M2X4G64CB8HG5N-DG 4GB

G Skill Intl F4-3200C16-16GTZSK 16GB

G Skill Intl F4-3200C16-16GTZSK 16GB

Kingston KHX2133C11D3/4GX 4GB

Kingston KHX2133C11D3/4GX 4GB

Crucial Technology BLS4G4S240FSD.M8FADM 4GB

Crucial Technology BLS4G4S240FSD.M8FADM 4GB