Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Thermaltake Technology Co Ltd R009D408GX2-4000C19A 8GB

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB vs Thermaltake Technology Co Ltd R009D408GX2-4000C19A 8GB

总分
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Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

总分
star star star star star
Thermaltake Technology Co Ltd R009D408GX2-4000C19A 8GB

Thermaltake Technology Co Ltd R009D408GX2-4000C19A 8GB

差异

  • 更快的读取速度,GB/s
    3 left arrow 18
    测试中的平均数值
  • 低于PassMark测试中的延时,ns
    31 left arrow 65
    左右 -110% 更低的延时
  • 更快的写入速度,GB/s
    16.5 left arrow 1,592.0
    测试中的平均数值
  • 更高的内存带宽,mbps
    21300 left arrow 5300
    左右 4.02 更高的带宽

规格

完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Thermaltake Technology Co Ltd R009D408GX2-4000C19A 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时,ns
    65 left arrow 31
  • 读取速度,GB/s
    3,580.8 left arrow 18.0
  • 写入速度,GB/s
    1,592.0 left arrow 16.5
  • 内存带宽,mbps
    5300 left arrow 21300
Other
  • 描述
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    5-5-5-15 / 667 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    572 left arrow 3729
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最新比较