Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Century Micro Inc. CENTURY JAPAN MEMORY 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Century Micro Inc. CENTURY JAPAN MEMORY 8GB

总分
star star star star star
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

总分
star star star star star
Century Micro Inc. CENTURY JAPAN MEMORY 8GB

Century Micro Inc. CENTURY JAPAN MEMORY 8GB

差异

  • 低于PassMark测试中的延时,ns
    24 left arrow 36
    左右 33% 更低的延时
  • 更高的内存带宽,mbps
    19200 left arrow 17000
    左右 1.13% 更高的带宽
  • 更快的写入速度,GB/s
    13.2 left arrow 12.5
    测试中的平均数值

规格

完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Century Micro Inc. CENTURY JAPAN MEMORY 8GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时,ns
    24 left arrow 36
  • 读取速度,GB/s
    16.0 left arrow 16.0
  • 写入速度,GB/s
    12.5 left arrow 13.2
  • 内存带宽,mbps
    19200 left arrow 17000
Other
  • 描述
    PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
  • 时序/时钟速度
    15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2925 left arrow 3313
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最新比较