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Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Crucial Technology BL8G32C16U4BL.M8FE1 8GB
比较
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Crucial Technology BL8G32C16U4BL.M8FE1 8GB
总分
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
总分
Crucial Technology BL8G32C16U4BL.M8FE1 8GB
差异
规格
评论
差异
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
报告一个错误
低于PassMark测试中的延时,ns
24
29
左右 17% 更低的延时
需要考虑的原因
Crucial Technology BL8G32C16U4BL.M8FE1 8GB
报告一个错误
更快的读取速度,GB/s
20.2
16
测试中的平均数值
更快的写入速度,GB/s
15.7
12.5
测试中的平均数值
更高的内存带宽,mbps
21300
19200
左右 1.11 更高的带宽
规格
完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Crucial Technology BL8G32C16U4BL.M8FE1 8GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
24
29
读取速度,GB/s
16.0
20.2
写入速度,GB/s
12.5
15.7
内存带宽,mbps
19200
21300
Other
描述
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
时序/时钟速度
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
2925
3559
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM的比较
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
Crucial Technology BL8G32C16U4BL.M8FE1 8GB RAM的比较
TwinMOS 8DPT5MK8-TATP 2GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Crucial Technology BL8G32C16U4BL.M8FE1 8GB
Samsung M378B5673EH1-CF8 2GB
Kingmax Semiconductor GLLG42F-DA---------- 8GB
TwinMOS 8DPT5MK8-TATP 2GB
Kingston 9965589-043.E00G 16GB
Essencore Limited KD48GU88C-26N1600 8GB
G Skill Intl F4-2666C15-16GVK 16GB
Corsair CMD8GX3M2A2933C12 4GB
G Skill Intl F4-3200C16-16GIS 16GB
Kingston 9905471-006.A01LF 4GB
EXCELERAM D4168G8HHSS9CJRB21 16GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
G Skill Intl F4-3600C16-8GTZRC 8GB
A-DATA Technology AD73I1C1674EV 4GB
G Skill Intl F4-2800C14-16GVK 16GB
Samsung 1600 CL10 Series 8GB
Essencore Limited IM44GU48N26-FFFHM 4GB
SK Hynix HMT41GU7BFR8A-PB 8GB
Hynix Semiconductor (Hyundai Electronics) HMA82GS6MFR8N
Samsung M3 78T5663EH3-CF7 2GB
Crucial Technology BLS16G4S240FSD.16FBR 16GB
Kingston 99U5403-036.A00G 4GB
G Skill Intl F4-3000C15-4GVRB 4GB
Micron Technology 18HTF12872AY-800F1 1GB
Patriot Memory (PDP Systems) PSD44G240081 4GB
A-DATA Technology AD73I1C1674EV 4GB
Corsair CM4X8GE2400C15K4 8GB
报告一个错误
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Bug description
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