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Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
G Skill Intl F4-2666C18-32GTZN 32GB
比较
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs G Skill Intl F4-2666C18-32GTZN 32GB
总分
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
总分
G Skill Intl F4-2666C18-32GTZN 32GB
差异
规格
评论
差异
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
报告一个错误
低于PassMark测试中的延时,ns
24
31
左右 23% 更低的延时
需要考虑的原因
G Skill Intl F4-2666C18-32GTZN 32GB
报告一个错误
更快的读取速度,GB/s
19.1
16
测试中的平均数值
更快的写入速度,GB/s
15.5
12.5
测试中的平均数值
更高的内存带宽,mbps
21300
19200
左右 1.11 更高的带宽
规格
完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
G Skill Intl F4-2666C18-32GTZN 32GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
24
31
读取速度,GB/s
16.0
19.1
写入速度,GB/s
12.5
15.5
内存带宽,mbps
19200
21300
Other
描述
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-21300, 1.2V, CAS Supported: 13 14 15 16 17 18
时序/时钟速度
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
2925
3753
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM的比较
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
G Skill Intl F4-2666C18-32GTZN 32GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Micron Technology 16JTF51264HZ-1G6M1 4GB
Crucial Technology BL16G26C16U4B.16FD 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F4-2666C18-32GTZN 32GB
Kingston 9905403-061.A00LF 2GB
Corsair CMR16GX4M2A2666C16 8GB
SK Hynix HMT451S6BFR8A-PB 4GB
Corsair CMD32GX4M4A2666C16 8GB
Samsung 1600 CL10 Series 8GB
Kingston KHX2666C16S4/16G 16GB
G Skill Intl F3-2133C9-4GAB 4GB
Smart Modular SF4642G8CK8I8HLSBG 16GB
Samsung M393B1K70CH0-CH9 8GB
DSL Memory D4SH1G081SH26A-C 8GB
Samsung M3 78T2863EHS-CF7 1GB
Kingston LV36D4U1S8HD-8XR 8GB
G Skill Intl F3-1866C8-8GTX 8GB
Micron Technology 16ATF2G64HZ-2G3B2 16GB
SK Hynix HMT425S6AFR6A-PB 2GB
Apacer Technology 78.DAGP2.4030B 16GB
Samsung M471B5674QH0-YK0 2GB
Corsair CMT128GX4M8C3000C15 16GB
Samsung M386B4G70DM0-CMA4 32GB
Micron Technology 16GB 2133MHz DIMM 16GB
A-DATA Technology DDR2 800G 2GB
Chun Well Technology Holding Limited D4U1636181DC 16GB
Kingston 99U5429-007.A00LF 2GB
G Skill Intl F4-2400C15-8GVR 8GB
报告一个错误
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Bug description
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