Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

G Skill Intl F4-3200C14-16GVK 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs G Skill Intl F4-3200C14-16GVK 16GB

总分

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

总分

G Skill Intl F4-3200C14-16GVK 16GB

G Skill Intl F4-3200C14-16GVK 16GB

差异规格评论

差异

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

报告一个错误

低于PassMark测试中的延时，ns

24 29

左右 17% 更低的延时
更高的内存带宽，mbps

19200 17000

左右 1.13% 更高的带宽

G Skill Intl F4-3200C14-16GVK 16GB

需要考虑的原因
G Skill Intl F4-3200C14-16GVK 16GB

报告一个错误

更快的读取速度，GB/s

20 16

测试中的平均数值
更快的写入速度，GB/s

15.8 12.5

测试中的平均数值

规格

完整的技术规格清单

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

G Skill Intl F4-3200C14-16GVK 16GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

24 29
读取速度，GB/s

16.0 20.0
写入速度，GB/s

12.5 15.8
内存带宽，mbps

19200 17000

Other

描述

PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2925 3831

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

G Skill Intl F4-3200C14-16GVK 16GB

G Skill Intl F4-3200C14-16GVK 16GB

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

Essencore Limited KD4AGS88C-32N220D 16GB

Essencore Limited KD4AGS88C-32N220D 16GB

Kingston 9905471-006.A01LF 4GB

Kingston 9905471-006.A01LF 4GB

G Skill Intl F3-17600CL9-2GBXMD 2GB

G Skill Intl F3-17600CL9-2GBXMD 2GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Golden Empire CL15-17-17 D4-2666 8GB

Golden Empire CL15-17-17 D4-2666 8GB

Samsung M393B1K70CH0-CH9 8GB

Samsung M393B1K70CH0-CH9 8GB

Kingston 9905703-008.A00G 16GB

Kingston 9905703-008.A00G 16GB

Nanya Technology NT2GT64U8HD0BN-AD 2GB

Nanya Technology NT2GT64U8HD0BN-AD 2GB

Corsair CMW32GX4M2D3600C18 16GB

Corsair CMW32GX4M2D3600C18 16GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

Crucial Technology CT8G4DFS824A.M8FB 8GB

Crucial Technology CT8G4DFS824A.M8FB 8GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Crucial Technology BLS8G4D240FSC.16FARG 8GB

Crucial Technology BLS8G4D240FSC.16FARG 8GB

Kingston HP698651-154-MCN 8GB

Kingston HP698651-154-MCN 8GB

SK Hynix HMA41GR7MFR8N-TF 8GB

SK Hynix HMA41GR7MFR8N-TF 8GB

Kingston KHYXPX-HYJ 8GB

Kingston KHYXPX-HYJ 8GB

Team Group Inc. TEAMGROUP-UD4-2400 8GB

Team Group Inc. TEAMGROUP-UD4-2400 8GB

Kreton Corporation 51624xxxx68x35xxxx 2GB

Kreton Corporation 51624xxxx68x35xxxx 2GB

Crucial Technology CT8G4SFS824A.M8FE 8GB

Crucial Technology CT8G4SFS824A.M8FE 8GB

Samsung M378B5673FH0-CH9 2GB

Samsung M378B5673FH0-CH9 2GB

Shanghai Kuxin Microelectronics Ltd NMUD480E82-3600 8GB

Shanghai Kuxin Microelectronics Ltd NMUD480E82-3600 8GB

SpecTek Incorporated ?????????????????? 2GB

SpecTek Incorporated ?????????????????? 2GB

Crucial Technology BLT16G4D30BET4.C16FD 16GB

Crucial Technology BLT16G4D30BET4.C16FD 16GB

Micron Technology 16JSF25664HZ-1G1F1 2GB

Micron Technology 16JSF25664HZ-1G1F1 2GB

G Skill Intl F4-4000C19-16GTRG 16GB

G Skill Intl F4-4000C19-16GTRG 16GB