Samsung 1600 CL10 Series 8GB vs Transcend Information TS2GSH64V1B 16GB

总分

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

总分

Transcend Information TS2GSH64V1B 16GB

Transcend Information TS2GSH64V1B 16GB

差异规格评论

差异

Samsung 1600 CL10 Series 8GB

需要考虑的原因
Samsung 1600 CL10 Series 8GB

报告一个错误

低于PassMark测试中的延时，ns

25 30

左右 17% 更低的延时
更快的读取速度，GB/s

16.1 12

测试中的平均数值
更快的写入速度，GB/s

10.1 8.3

测试中的平均数值

Transcend Information TS2GSH64V1B 16GB

需要考虑的原因
Transcend Information TS2GSH64V1B 16GB

报告一个错误

更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Samsung 1600 CL10 Series 8GB

Transcend Information TS2GSH64V1B 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

25 30
读取速度，GB/s

16.1 12.0
写入速度，GB/s

10.1 8.3
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2764 2034

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

Transcend Information TS2GSH64V1B 16GB

Transcend Information TS2GSH64V1B 16GB

Swissbit MEU25664D6BC2EP-30 2GB

Swissbit MEU25664D6BC2EP-30 2GB

Crucial Technology BL8G32C16U4WL.8FE 8GB

Crucial Technology BL8G32C16U4WL.8FE 8GB

Crucial Technology 8G4US2400.M8B1 8GB

Crucial Technology 8G4US2400.M8B1 8GB

Samsung M378A1G43EB1-CPB 8GB

Samsung M378A1G43EB1-CPB 8GB

G Skill Intl F5-6400J3239G16G 16GB

G Skill Intl F5-6400J3239G16G 16GB

Corsair CMK128GX4M8Z2933C16 16GB

Corsair CMK128GX4M8Z2933C16 16GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

Crucial Technology CT16G4S24AM.M16FE 16GB

Crucial Technology CT16G4S24AM.M16FE 16GB

Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

Corsair CMR128GX4M8Z2933C16 16GB

Corsair CMR128GX4M8Z2933C16 16GB

SK Hynix HMT351U6CFR8C-H9 4GB

SK Hynix HMT351U6CFR8C-H9 4GB

Chun Well Technology Holding Limited CL16-18-18 D4-3000 16GB

Chun Well Technology Holding Limited CL16-18-18 D4-3000

Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C

Essencore Limited KD4AGU880-34A170X 16GB

Essencore Limited KD4AGU880-34A170X 16GB

Samsung M393B5170EH1-CH9 4GB

Samsung M393B5170EH1-CH9 4GB

Crucial Technology BL8G32C16U4WL.M8FE 8GB

Crucial Technology BL8G32C16U4WL.M8FE 8GB

G Skill Intl F3-10600CL9-2GBNT 2GB

G Skill Intl F3-10600CL9-2GBNT 2GB

Crucial Technology CT8G4SFS832A.C8FP 8GB

Crucial Technology CT8G4SFS832A.C8FP 8GB

Samsung M4 70T2953EZ3-CE6 1GB

Samsung M4 70T2953EZ3-CE6 1GB

G Skill Intl F4-3600C16-16GTRG 16GB

G Skill Intl F4-3600C16-16GTRG 16GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

G Skill Intl F4-2400C15-8GFXR 8GB

G Skill Intl F4-2400C15-8GFXR 8GB

Crucial Technology BLS8G4D26BFSEK.8FBD 8GB

Crucial Technology BLS8G4D26BFSEK.8FBD 8GB

Crucial Technology CT4G4DFS8213.C8FHP 4GB

Crucial Technology CT4G4DFS8213.C8FHP 4GB

Kingston 9905403-156.A00LF 2GB

Kingston 9905403-156.A00LF 2GB

Mushkin 99[2/7/4]190F 4GB

Mushkin 99[2/7/4]190F 4GB