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Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Kingston 99U5712-002.A00G 16GB
比较
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Kingston 99U5712-002.A00G 16GB
总分
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
总分
Kingston 99U5712-002.A00G 16GB
差异
规格
评论
差异
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
报告一个错误
低于PassMark测试中的延时,ns
24
27
左右 11% 更低的延时
需要考虑的原因
Kingston 99U5712-002.A00G 16GB
报告一个错误
更快的读取速度,GB/s
17.6
16
测试中的平均数值
更快的写入速度,GB/s
14.9
12.5
测试中的平均数值
更高的内存带宽,mbps
21300
19200
左右 1.11 更高的带宽
规格
完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Kingston 99U5712-002.A00G 16GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
24
27
读取速度,GB/s
16.0
17.6
写入速度,GB/s
12.5
14.9
内存带宽,mbps
19200
21300
Other
描述
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
2925
3036
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM的比较
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
Kingston 99U5712-002.A00G 16GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M393B1G70BH0-CK0 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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Samsung M391B5673EH1-CH9 2GB
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Crucial Technology BLT2G3D1608DT1TX0 2GB
Neo Forza GKE160SO204808-3200 16GB
Samsung M393A1G40DB0-CPB 8GB
Kingston 9905713-030.A00G 8GB
TwinMOS 8DHE3MN8-HATP 2GB
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SK Hynix HYMP125S64CP8-S6 2GB
Apacer Technology 78.C2GFK.AR20B 8GB
Crucial Technology BLS8G3N18AES4.16FE 8GB
Kingston KHX2400C15/16G 16GB
报告一个错误
×
Bug description
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