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Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Kingston ACR32D4U2S1ME-8 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Kingston ACR32D4U2S1ME-8 8GB

总分
star star star star star
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

总分
star star star star star
Kingston ACR32D4U2S1ME-8 8GB

Kingston ACR32D4U2S1ME-8 8GB

差异 规格 评论

差异

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB 需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    24 left arrow 36
    左右 33% 更低的延时
  • 更快的写入速度，GB/s
    12.5 left arrow 11.5
    测试中的平均数值
Kingston ACR32D4U2S1ME-8 8GB 需要考虑的原因
Kingston ACR32D4U2S1ME-8 8GB
报告一个错误
  • 更快的读取速度，GB/s
    17.4 left arrow 16
    测试中的平均数值
  • 更高的内存带宽，mbps
    25600 left arrow 19200
    左右 1.33 更高的带宽

规格

完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Kingston ACR32D4U2S1ME-8 8GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    24 left arrow 36
  • 读取速度，GB/s
    16.0 left arrow 17.4
  • 写入速度，GB/s
    12.5 left arrow 11.5
  • 内存带宽，mbps
    19200 left arrow 25600
Other
  • 描述
    PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
  • 时序/时钟速度
    15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • 排名PassMark (越多越好)
    2925 left arrow 2876

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM的比较

Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB

Kingston ACR32D4U2S1ME-8 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Kingston ACR32D4U2S1ME-8 8GB
Kingston ACR32D4U2S1ME-8 8GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Kingston ACR24D4U7D8MB-16 16GB
Kingston ACR24D4U7D8MB-16 16GB
内存RAM
A-DATA Technology DQVE1908 512MB
A-DATA Technology DQVE1908 512MB
Corsair CMK16GX4M2K4266C19 8GB
Corsair CMK16GX4M2K4266C19 8GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS16G4D240FSE.16FBD 16GB
Crucial Technology BLS16G4D240FSE.16FBD 16GB
内存RAM
Golden Empire 1GB DDR2 800 CAS=4 1GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
Micron Technology 36ASF4G72LZ-2G3A1 32GB
Micron Technology 36ASF4G72LZ-2G3A1 32GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Corsair CMSX64GX4M4A2400C16 16GB
Corsair CMSX64GX4M4A2400C16 16GB
内存RAM
Ramos Technology EWB8GB681CA3-16IC 8GB
Ramos Technology EWB8GB681CA3-16IC 8GB
G Skill Intl F4-3400C16-16GVR 16GB
G Skill Intl F4-3400C16-16GVR 16GB
内存RAM
Kingston KHX1600C10D3/8G 8GB
Kingston KHX1600C10D3/8G 8GB
Kllisre 8GB
Kllisre 8GB
内存RAM
Samsung M378B5673FH0-CH9 2GB
Samsung M378B5673FH0-CH9 2GB
Crucial Technology CT16G4DFD824A.C16FDR 16GB
Crucial Technology CT16G4DFD824A.C16FDR 16GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
SK Hynix HMA84GL7AFR4N-UH 32GB
SK Hynix HMA84GL7AFR4N-UH 32GB
内存RAM
Corsair CML8GX3M2A1600C9 4GB
Corsair CML8GX3M2A1600C9 4GB
Kingston 9905712-016.A00G 16GB
Kingston 9905712-016.A00G 16GB
内存RAM
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Crucial Technology CT16G4SFD8266.C8FBD1 16GB
Crucial Technology CT16G4SFD8266.C8FBD1 16GB
内存RAM
Kingston ACR512X64D3S13C9G 4GB
Kingston ACR512X64D3S13C9G 4GB
TwinMOS 9DPT1CO4E-TATP 8GB
TwinMOS 9DPT1CO4E-TATP 8GB
内存RAM
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Apacer Technology 78.C2GF6.AU20B 8GB
Apacer Technology 78.C2GF6.AU20B 8GB
内存RAM