Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Micron Technology 18ASF2G72PDZ-2G3B1 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Micron Technology 18ASF2G72PDZ-2G3B1 16GB

总分

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

总分

Micron Technology 18ASF2G72PDZ-2G3B1 16GB

Micron Technology 18ASF2G72PDZ-2G3B1 16GB

差异规格评论

差异

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

报告一个错误

低于PassMark测试中的延时，ns

24 57

左右 58% 更低的延时
更快的读取速度，GB/s

16 9.5

测试中的平均数值
更快的写入速度，GB/s

12.5 7.4

测试中的平均数值

Micron Technology 18ASF2G72PDZ-2G3B1 16GB

需要考虑的原因
Micron Technology 18ASF2G72PDZ-2G3B1 16GB

报告一个错误

规格

完整的技术规格清单

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Micron Technology 18ASF2G72PDZ-2G3B1 16GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

24 57
读取速度，GB/s

16.0 9.5
写入速度，GB/s

12.5 7.4
内存带宽，mbps

19200 19200

Other

描述

PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2925 2213

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Micron Technology 18ASF2G72PDZ-2G3B1 16GB

Micron Technology 18ASF2G72PDZ-2G3B1 16GB

SK Hynix HMT351S6CFR8C-PB 4GB

SK Hynix HMT351S6CFR8C-PB 4GB

Kingston KST-2133MHZ-4G 4GB

Kingston KST-2133MHZ-4G 4GB

Kingston 99U5474-010.A00LF 2GB

Kingston 99U5474-010.A00LF 2GB

Corsair CMW32GX4M2D3000C16 16GB

Corsair CMW32GX4M2D3000C16 16GB

A-DATA Technology DQKD1A08 1GB

A-DATA Technology DQKD1A08 1GB

Crucial Technology CT16G4DFD8266.C16FE 16GB

Crucial Technology CT16G4DFD8266.C16FE 16GB

Crucial Technology CT8G48C40U5.M4A1 8GB

Crucial Technology CT8G48C40U5.M4A1 8GB

Samsung M378A5143TB2-CTD 4GB

Samsung M378A5143TB2-CTD 4GB

Kingston 99U5474-028.A00LF 4GB

Kingston 99U5474-028.A00LF 4GB

Thermaltake Technology Co Ltd R017D408GX2-4400C19A 8GB

Thermaltake Technology Co Ltd R017D408GX2-4400C19A 8GB

Patriot Memory (PDP Systems) PSD38G13332 8GB

Patriot Memory (PDP Systems) PSD38G13332 8GB

Crucial Technology CT16G4DFD824A.C16FDR 16GB

Crucial Technology CT16G4DFD824A.C16FDR 16GB

Samsung M471B5273DH0-CH9 4GB

Samsung M471B5273DH0-CH9 4GB

SK Hynix HMA82GU7MFR8N-TF 16GB

SK Hynix HMA82GU7MFR8N-TF 16GB

Crucial Technology CT102464BA160B.M16 8GB

Crucial Technology CT102464BA160B.M16 8GB

Crucial Technology CT4G4DFS8213.M8FA 4GB

Crucial Technology CT4G4DFS8213.M8FA 4GB

SK Hynix HMT425S6CFR6A-PB 2GB

SK Hynix HMT425S6CFR6A-PB 2GB

Avant Technology W6451U48J7240N6 4GB

Avant Technology W6451U48J7240N6 4GB

Samsung M4 70T2864QZ3-CF7 1GB

Samsung M4 70T2864QZ3-CF7 1GB

Avexir Technologies Corporation DDR4-2400 4GB CL16 4GB

Avexir Technologies Corporation DDR4-2400 4GB CL16 4GB

Kingston KVR533D2N4 512MB

Kingston KVR533D2N4 512MB

Apacer Technology GD2.1827CS.003 8GB

Apacer Technology GD2.1827CS.003 8GB

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

Avexir Technologies Corporation DDR4-2666 CL15 8GB 8GB

Avexir Technologies Corporation DDR4-2666 CL15 8GB 8GB

Apacer Technology 78.01G86.9H50C 1GB

Apacer Technology 78.01G86.9H50C 1GB

Corsair CMK128GX4M8X3800C19 16GB

Corsair CMK128GX4M8X3800C19 16GB