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Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Samsung M378A1K43BB2-CRC 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Samsung M378A1K43BB2-CRC 8GB

总分
star star star star star
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

总分
star star star star star
Samsung M378A1K43BB2-CRC 8GB

Samsung M378A1K43BB2-CRC 8GB

差异 规格 评论

差异

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB 需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    24 left arrow 36
    左右 33% 更低的延时
  • 更快的读取速度，GB/s
    16 left arrow 14.7
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.5 left arrow 10.0
    测试中的平均数值
Samsung M378A1K43BB2-CRC 8GB 需要考虑的原因
Samsung M378A1K43BB2-CRC 8GB
报告一个错误

规格

完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Samsung M378A1K43BB2-CRC 8GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    24 left arrow 36
  • 读取速度，GB/s
    16.0 left arrow 14.7
  • 写入速度，GB/s
    12.5 left arrow 10.0
  • 内存带宽，mbps
    19200 left arrow 19200
Other
  • 描述
    PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2925 left arrow 2490

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM的比较

Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB

Samsung M378A1K43BB2-CRC 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Samsung M378A1K43BB2-CRC 8GB
Samsung M378A1K43BB2-CRC 8GB
内存RAM
Samsung M378B5673EH1-CF8 2GB
Samsung M378B5673EH1-CF8 2GB
Kingston KHX2666C13/8GX 8GB
Kingston KHX2666C13/8GX 8GB
内存RAM
Samsung M393B2G70BH0-YK0 16GB
Samsung M393B2G70BH0-YK0 16GB
Avexir Technologies Corporation DDR4-2400 8GB CL16 8GB
Avexir Technologies Corporation DDR4-2400 8GB CL16 8GB
内存RAM
Kingston 9905403-174.A00LF 2GB
Kingston 9905403-174.A00LF 2GB
Kingston 9905678-043.A00G 8GB
Kingston 9905678-043.A00G 8GB
内存RAM
Corsair CMV4GX3M1B1600C11 4GB
Corsair CMV4GX3M1B1600C11 4GB
Apacer Technology 78.CAGPN.DF40B 8GB
Apacer Technology 78.CAGPN.DF40B 8GB
内存RAM
Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
Micron Technology 16ATF2G64AZ-2G3H1 16GB
Micron Technology 16ATF2G64AZ-2G3H1 16GB
内存RAM
Samsung M395T2863QZ4-CF76 1GB
Samsung M395T2863QZ4-CF76 1GB
Corsair CMD32GX4M4A2400C12 8GB
Corsair CMD32GX4M4A2400C12 8GB
内存RAM
Samsung M471B1G73DB0-YK0 8GB
Samsung M471B1G73DB0-YK0 8GB
Corsair CMW16GX4M2C3600C18 8GB
Corsair CMW16GX4M2C3600C18 8GB
内存RAM
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Crucial Technology BLE16G4D30AEEA.K16FB 16GB
Crucial Technology BLE16G4D30AEEA.K16FB 16GB
内存RAM
Kingston KVR16N11/8-SP 8GB
Kingston KVR16N11/8-SP 8GB
Kingston KHX3600C18D4/32GX 32GB
Kingston KHX3600C18D4/32GX 32GB
内存RAM
A-DATA Technology DDR2 800G 2GB
A-DATA Technology DDR2 800G 2GB
Crucial Technology CT8G4SFRA32A.M8FRS 8GB
Crucial Technology CT8G4SFRA32A.M8FRS 8GB
内存RAM
Corsair CML8GX3M2A1600C9 4GB
Corsair CML8GX3M2A1600C9 4GB
V-GEN D4R8GL24A8R 8GB
V-GEN D4R8GL24A8R 8GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BL8G26C16U4B.8FD 8GB
Crucial Technology BL8G26C16U4B.8FD 8GB
内存RAM
Samsung M378B5673EH1-CF8 2GB
Samsung M378B5673EH1-CF8 2GB
Jinyu 16GB
Jinyu 16GB
内存RAM