Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs V-GEN D4H8GL26A8TS6 8GB

总分

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

总分

V-GEN D4H8GL26A8TS6 8GB

V-GEN D4H8GL26A8TS6 8GB

差异规格评论

差异

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

报告一个错误

低于PassMark测试中的延时，ns

24 61

左右 61% 更低的延时
更快的写入速度，GB/s

12.5 8.5

测试中的平均数值
更高的内存带宽，mbps

19200 17000

左右 1.13% 更高的带宽

V-GEN D4H8GL26A8TS6 8GB

需要考虑的原因
V-GEN D4H8GL26A8TS6 8GB

报告一个错误

更快的读取速度，GB/s

17.6 16

测试中的平均数值

规格

完整的技术规格清单

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

V-GEN D4H8GL26A8TS6 8GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

24 61
读取速度，GB/s

16.0 17.6
写入速度，GB/s

12.5 8.5
内存带宽，mbps

19200 17000

Other

描述

PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2925 2113

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Nanya Technology M2S8G64CC8HB5N-DI 8GB

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Kingston 9905458-017.A01LF 4GB

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G Skill Intl F3-14900CL8-4GBXM 4GB

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Corsair CMV4GX3M1B1600C11 4GB

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Crucial Technology CT16G4SFD8213.C16FDD 16GB

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Wilk Elektronik S.A. GR2666S464L19/16G 16GB

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Samsung M378T5663QZ3-CF7 2GB

Samsung M378T5663QZ3-CF7 2GB

Kingston KTD3KX-HYA 8GB

Kingston KTD3KX-HYA 8GB

Kingston KP4T2F-PSB 4GB

Kingston KP4T2F-PSB 4GB

Corsair CM4X16GC3200C16K2 16GB

Corsair CM4X16GC3200C16K2 16GB

AMD AE34G1601U1 4GB

AMD AE34G1601U1 4GB

Corsair CMV4GX4M1A2666C18 4GB

Corsair CMV4GX4M1A2666C18 4GB

Samsung M378B1G73QH0-CK0 8GB

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Patriot Memory (PDP Systems) PSD416G24002 16GB

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