Kingston 2GB-DDR2 800Mhz 2GB vs Kingston KYXC0V-MIB 16GB

总分

Kingston 2GB-DDR2 800Mhz 2GB

Kingston 2GB-DDR2 800Mhz 2GB

总分

Kingston KYXC0V-MIB 16GB

Kingston KYXC0V-MIB 16GB

差异规格评论

差异

Kingston 2GB-DDR2 800Mhz 2GB

需要考虑的原因
Kingston 2GB-DDR2 800Mhz 2GB

报告一个错误

更快的读取速度，GB/s

5 14.8

测试中的平均数值

Kingston KYXC0V-MIB 16GB

需要考虑的原因
Kingston KYXC0V-MIB 16GB

报告一个错误

低于PassMark测试中的延时，ns

34 43

左右 -26% 更低的延时
更快的写入速度，GB/s

9.9 2,160.7

测试中的平均数值
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

Kingston 2GB-DDR2 800Mhz 2GB

Kingston KYXC0V-MIB 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

43 34
读取速度，GB/s

5,987.5 14.8
写入速度，GB/s

2,160.7 9.9
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

957 2739

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

A-DATA Technology ADOVE1A0834E 1GB

A-DATA Technology ADOVE1A0834E 1GB

A-DATA Technology AO2P26KC8T1-BXGSHC 8GB

A-DATA Technology AO2P26KC8T1-BXGSHC 8GB

Samsung M471A2G43BB2-CWE 16GB

Samsung M471A2G43BB2-CWE 16GB

Samsung M471A2K43DB1-CWE 16GB

Samsung M471A2K43DB1-CWE 16GB

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8

Crucial Technology BL16G32C16U4W.M16FE1 16GB

Crucial Technology BL16G32C16U4W.M16FE1 16GB

Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C

Golden Empire CL17-17-17 D4-2400 16GB

Golden Empire CL17-17-17 D4-2400 16GB

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

Mushkin 99[2/7/4]191[F/T] 4GB

Mushkin 99[2/7/4]191[F/T] 4GB

Kingston 99U5584-001.A00LF 4GB

Kingston 99U5584-001.A00LF 4GB

Corsair CMW16GX4M2Z3600C18 8GB

Corsair CMW16GX4M2Z3600C18 8GB

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

G Skill Intl F4-2400C14-4GRK 4GB

G Skill Intl F4-2400C14-4GRK 4GB

Kingston 99U5584-005.A00LF 4GB

Kingston 99U5584-005.A00LF 4GB

Crucial Technology BLS8G4S240FSDK.8FD 8GB

Crucial Technology BLS8G4S240FSDK.8FD 8GB

Samsung M471B5273EB0-CK0 4GB

Samsung M471B5273EB0-CK0 4GB

G Skill Intl F4-2400C17-4GNT 4GB

G Skill Intl F4-2400C17-4GNT 4GB

Samsung M471B5273CH0-CH9 4GB

Samsung M471B5273CH0-CH9 4GB

Micron Technology 16ATF2G64HZ-2G1B1 16GB

Micron Technology 16ATF2G64HZ-2G1B1 16GB

Samsung M378B5173BH0-CH9 4GB

Samsung M378B5173BH0-CH9 4GB

Corsair CMK8GX4M2B4200C19 4GB

Corsair CMK8GX4M2B4200C19 4GB

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

Samsung M471A5244CB0-CRC 4GB

Samsung M471A5244CB0-CRC 4GB

SK Hynix HMT151R7TFR4C-H9 4GB

SK Hynix HMT151R7TFR4C-H9 4GB

Crucial Technology BLS8G4D30AESCK.M8FE 8GB

Crucial Technology BLS8G4D30AESCK.M8FE 8GB

SK Hynix HMA82GU6CJR8N-VK 16GB

SK Hynix HMA82GU6CJR8N-VK 16GB

Hynix Semiconductor (Hyundai Electronics) HMA82GU6AFR8N-UH 16GB

Hynix Semiconductor (Hyundai Electronics) HMA82GU6AFR8N