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Kingston 39P5429-006.AO01 2GB
Chun Well Technology Holding Limited CL18-20-20 D4-3600 8GB

Kingston 39P5429-006.AO01 2GB vs Chun Well Technology Holding Limited CL18-20-20 D4-3600 8GB

总分
star star star star star
Kingston 39P5429-006.AO01 2GB

Kingston 39P5429-006.AO01 2GB

总分
star star star star star
Chun Well Technology Holding Limited CL18-20-20 D4-3600 8GB

Chun Well Technology Holding Limited CL18-20-20 D4-3600 8GB

差异 规格 评论

差异

Kingston 39P5429-006.AO01 2GB 需要考虑的原因
Kingston 39P5429-006.AO01 2GB
报告一个错误
  • 更快的读取速度，GB/s
    6 left arrow 19.1
    测试中的平均数值
Chun Well Technology Holding Limited CL18-20-20 D4-3600 8GB 需要考虑的原因
Chun Well Technology Holding Limited CL18-20-20 D4-3600 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    27 left arrow 44
    左右 -63% 更低的延时
  • 更快的写入速度，GB/s
    16.2 left arrow 1,892.9
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 6400
    左右 2.66 更高的带宽

规格

完整的技术规格清单
Kingston 39P5429-006.AO01 2GB
Chun Well Technology Holding Limited CL18-20-20 D4-3600 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    44 left arrow 27
  • 读取速度，GB/s
    6,181.5 left arrow 19.1
  • 写入速度，GB/s
    1,892.9 left arrow 16.2
  • 内存带宽，mbps
    6400 left arrow 17000
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-17000, 1.2V, CAS Supported: 14 15 16
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    851 left arrow 3784

Kingston 39P5429-006.AO01 2GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) HYMP125U64CP8-S6 2GB
G Skill Intl F4-3200C16-32GTRG 32GB

Chun Well Technology Holding Limited CL18-20-20 D4-3600 8GB RAM的比较

G Skill Intl F5-6000J3636F16G 16GB
G Skill Intl F2-8500CL5-2GBPI 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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