Kingston 9905403-011.A03LF 2GB vs Galaxy Microsystems Ltd. GALAX OC LAB 8GB

总分

Kingston 9905403-011.A03LF 2GB

Kingston 9905403-011.A03LF 2GB

总分

Galaxy Microsystems Ltd. GALAX OC LAB 8GB

Galaxy Microsystems Ltd. GALAX OC LAB 8GB

差异规格评论

差异

Kingston 9905403-011.A03LF 2GB

需要考虑的原因
Kingston 9905403-011.A03LF 2GB

报告一个错误

Galaxy Microsystems Ltd. GALAX OC LAB 8GB

需要考虑的原因
Galaxy Microsystems Ltd. GALAX OC LAB 8GB

报告一个错误

低于PassMark测试中的延时，ns

20 27

左右 -35% 更低的延时
更快的读取速度，GB/s

19.7 13

测试中的平均数值
更快的写入速度，GB/s

15.2 8.0

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Kingston 9905403-011.A03LF 2GB

Galaxy Microsystems Ltd. GALAX OC LAB 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 20
读取速度，GB/s

13.0 19.7
写入速度，GB/s

8.0 15.2
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1976 3473

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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TwinMOS 8DPT5MK8-TATP 2GB

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Kingston 9905403-011.A03LF 2GB

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Crucial Technology CT4G4DFS8213.C8FDD2 4GB

Crucial Technology CT4G4DFS8213.C8FDD2 4GB

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Kingston KHX2400C11D3/4GX 4GB

Corsair CMV4GX4M1A2400C16 4GB

Corsair CMV4GX4M1A2400C16 4GB

Kingston ACR32D4U2S8HD-8X 8GB

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G Skill Intl F4-3000C15-4GRK 4GB

G Skill Intl F4-3000C15-4GRK 4GB

SK Hynix HMT325U6CFR8C-PB 2GB

SK Hynix HMT325U6CFR8C-PB 2GB

G Skill Intl F4-3600C19-8GSXW 8GB

G Skill Intl F4-3600C19-8GSXW 8GB