Kingston 9905471-006.A00LF 4GB vs Patriot Memory (PDP Systems) 3600 C16 Series 8GB

总分

Kingston 9905471-006.A00LF 4GB

Kingston 9905471-006.A00LF 4GB

总分

Patriot Memory (PDP Systems) 3600 C16 Series 8GB

Patriot Memory (PDP Systems) 3600 C16 Series 8GB

差异规格评论

差异

Kingston 9905471-006.A00LF 4GB

需要考虑的原因
Kingston 9905471-006.A00LF 4GB

报告一个错误

Patriot Memory (PDP Systems) 3600 C16 Series 8GB

需要考虑的原因
Patriot Memory (PDP Systems) 3600 C16 Series 8GB

报告一个错误

低于PassMark测试中的延时，ns

24 38

左右 -58% 更低的延时
更快的读取速度，GB/s

20.6 12.9

测试中的平均数值
更快的写入速度，GB/s

16.9 8.3

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Kingston 9905471-006.A00LF 4GB

Patriot Memory (PDP Systems) 3600 C16 Series 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

38 24
读取速度，GB/s

12.9 20.6
写入速度，GB/s

8.3 16.9
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2144 3870

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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G Skill Intl F4-3200C16-16GTZSK 16GB

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Micron Technology MTA8ATF1G64HZ-2G3B1 16GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

G Skill Intl F4-3200C14-8GTZKO 8GB

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Samsung M393B5270CH0-CH9 4GB

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Micron Technology 8ATF51264AZ-2G1A2 4GB

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Patriot Memory (PDP Systems) PSD22G8002 2GB

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SK Hynix HMA451U7MFR8N-TF 4GB