Kingston 9905584-016.A00LF 4GB vs Kingston 9905625-066.A00G 16GB

总分

Kingston 9905584-016.A00LF 4GB

Kingston 9905584-016.A00LF 4GB

总分

Kingston 9905625-066.A00G 16GB

Kingston 9905625-066.A00G 16GB

差异规格评论

差异

Kingston 9905584-016.A00LF 4GB

需要考虑的原因
Kingston 9905584-016.A00LF 4GB

报告一个错误

低于PassMark测试中的延时，ns

26 32

左右 19% 更低的延时

Kingston 9905625-066.A00G 16GB

需要考虑的原因
Kingston 9905625-066.A00G 16GB

报告一个错误

更快的读取速度，GB/s

15.2 14.2

测试中的平均数值
更快的写入速度，GB/s

10.2 8.5

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Kingston 9905584-016.A00LF 4GB

Kingston 9905625-066.A00G 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

26 32
读取速度，GB/s

14.2 15.2
写入速度，GB/s

8.5 10.2
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2277 2882

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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SK Hynix HMA82GS6CJR8N-VK 16GB

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V-Color Technology Inc. TL48G24S815RGB 8GB

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Samsung M471A1G43DB0-CPB 8GB

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Samsung M471B5673FH0-CF8 2GB

Samsung M471B5673FH0-CF8 2GB

Corsair CMD16GX4M4B3200C14 4GB

Corsair CMD16GX4M4B3200C14 4GB

Crucial Technology CT51264AC800.C16FC 4GB

Crucial Technology CT51264AC800.C16FC 4GB

Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16GB

Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16

Kingston KP223C-ELD 2GB

Kingston KP223C-ELD 2GB

SK Hynix GKE160UD102408-2400 16GB

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G Skill Intl F3-2133C9-4GAB 4GB

Micron Technology 16ATF2G64AZ-2G3B1 16GB

Micron Technology 16ATF2G64AZ-2G3B1 16GB