Kingston 9965525-018.A00LF 4GB vs Kingston HX432C15PB3/16G 16GB

总分

Kingston 9965525-018.A00LF 4GB

Kingston 9965525-018.A00LF 4GB

总分

Kingston HX432C15PB3/16G 16GB

Kingston HX432C15PB3/16G 16GB

差异规格评论

差异

Kingston 9965525-018.A00LF 4GB

需要考虑的原因
Kingston 9965525-018.A00LF 4GB

报告一个错误

低于PassMark测试中的延时，ns

27 36

左右 25% 更低的延时

Kingston HX432C15PB3/16G 16GB

需要考虑的原因
Kingston HX432C15PB3/16G 16GB

报告一个错误

更快的读取速度，GB/s

15.8 13.2

测试中的平均数值
更快的写入速度，GB/s

10.6 8.6

测试中的平均数值
更高的内存带宽，mbps

25600 10600

左右 2.42 更高的带宽

规格

完整的技术规格清单

Kingston 9965525-018.A00LF 4GB

Kingston HX432C15PB3/16G 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 36
读取速度，GB/s

13.2 15.8
写入速度，GB/s

8.6 10.6
内存带宽，mbps

10600 25600

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-25600, 1.2V, CAS Supported: 9 11 12 13 14 15 16 17
时序/时钟速度

7-7-7-20 / 1333 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

2196 2736

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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Shenzhen Xingmem Technology Corp CM4X8GF2400C1XMP 8GB

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Samsung M3 78T2863QZS-CF7 1GB

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Mushkin 991679ES 996679ES 2GB

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Crucial Technology B|B8G4D30BET4K.C8FD 8GB

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Corsair CMZ16GX3M2A2400C10 8GB

Corsair CMZ16GX3M2A2400C10 8GB

Micron Technology 16ATF2G64HZ-2G3B2 16GB

Micron Technology 16ATF2G64HZ-2G3B2 16GB

AMD AE34G1601U1 4GB

AMD AE34G1601U1 4GB

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Crucial Technology BLS8G4D32AESTK.M8FE1 8GB

Samsung M3 78T2863QZS-CF7 1GB

Samsung M3 78T2863QZS-CF7 1GB

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Kingston ACR16D3LS1NGG/2G 2GB

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Nanya Technology M2F8G64CB8HC9N-DI 8GB

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Crucial Technology BL8G30C15U4W.8FE 8GB