Kingston 99U5474-022.A00LF 2GB vs Samsung M378A5244CB0-CWE 4GB

总分

Kingston 99U5474-022.A00LF 2GB

Kingston 99U5474-022.A00LF 2GB

总分

Samsung M378A5244CB0-CWE 4GB

Samsung M378A5244CB0-CWE 4GB

差异规格评论

差异

Kingston 99U5474-022.A00LF 2GB

需要考虑的原因
Kingston 99U5474-022.A00LF 2GB

报告一个错误

低于PassMark测试中的延时，ns

26 34

左右 24% 更低的延时

Samsung M378A5244CB0-CWE 4GB

需要考虑的原因
Samsung M378A5244CB0-CWE 4GB

报告一个错误

更快的读取速度，GB/s

16.7 13

测试中的平均数值
更快的写入速度，GB/s

12.3 9.5

测试中的平均数值
更高的内存带宽，mbps

25600 12800

左右 2 更高的带宽

规格

完整的技术规格清单

Kingston 99U5474-022.A00LF 2GB

Samsung M378A5244CB0-CWE 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

26 34
读取速度，GB/s

13.0 16.7
写入速度，GB/s

9.5 12.3
内存带宽，mbps

12800 25600

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
时序/时钟速度

9-9-9-24 / 1600 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

2030 2584

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology CT8G3S186DM.C16FN 8GB

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Crucial Technology CT102464BF160B.16F 8GB

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Nanya Technology M2Y51264TU88B0B-3C 512MB

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Heoriady M471A1K43CB1-CTD 8GB

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Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB

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Corsair CMW16GX4M2C3000C15 8GB

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Corsair CMWX16GC3200C16W2E 16GB

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Samsung M378B5673FH0-CH9 2GB

Samsung M378B5673FH0-CH9 2GB

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Corsair CMZ16GX3M2A2400C10 8GB

Corsair CMZ16GX3M2A2400C10 8GB

Corsair CMK16GX4M2E4333C19 8GB

Corsair CMK16GX4M2E4333C19 8GB

Corsair CMD16GX3M2A1866C9 8GB

Corsair CMD16GX3M2A1866C9 8GB

Samsung V-GeN D4S8GL24A8 8GB

Samsung V-GeN D4S8GL24A8 8GB

Corsair CMSX32GX4M2A3200C22 16GB

Corsair CMSX32GX4M2A3200C22 16GB

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Samsung M471A4G43AB1-CWE 32GB

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Samsung M4 70T5663QZ3-CF7 2GB

Apacer Technology 78.D2GFH.4030B 16GB

Apacer Technology 78.D2GFH.4030B 16GB