Kingston 99U5584-010.A00LF 4GB vs G Skill Intl F4-3200C22-32GRS 32GB

总分

Kingston 99U5584-010.A00LF 4GB

Kingston 99U5584-010.A00LF 4GB

总分

G Skill Intl F4-3200C22-32GRS 32GB

G Skill Intl F4-3200C22-32GRS 32GB

差异规格评论

差异

Kingston 99U5584-010.A00LF 4GB

需要考虑的原因
Kingston 99U5584-010.A00LF 4GB

报告一个错误

低于PassMark测试中的延时，ns

35 51

左右 31% 更低的延时

G Skill Intl F4-3200C22-32GRS 32GB

需要考虑的原因
G Skill Intl F4-3200C22-32GRS 32GB

报告一个错误

更快的读取速度，GB/s

16.3 12.8

测试中的平均数值
更快的写入速度，GB/s

14.6 7.1

测试中的平均数值
更高的内存带宽，mbps

25600 12800

左右 2 更高的带宽

规格

完整的技术规格清单

Kingston 99U5584-010.A00LF 4GB

G Skill Intl F4-3200C22-32GRS 32GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

35 51
读取速度，GB/s

12.8 16.3
写入速度，GB/s

7.1 14.6
内存带宽，mbps

12800 25600

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22
时序/时钟速度

9-9-9-24 / 1600 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

1937 2945

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CMD16GX4M2E4000C19 8GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

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Micron Technology 8ATF1G64HZ-2G6D1 8GB

Micron Technology 8ATF1G64HZ-2G6D1 8GB

A-DATA Technology VDQVE1B16 2GB

A-DATA Technology VDQVE1B16 2GB

Essencore Limited IM48GU88A30-FGGHMZ 8GB

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Kingston ACR512X64D3S13C9G 4GB

Crucial Technology BL8G30C15U4W.8FE 8GB

Crucial Technology BL8G30C15U4W.8FE 8GB