Samsung M471B5273CH0-CH9 4GB vs Micron Technology MTA8ATF1G64HZ-2G3B1 16GB

总分

Samsung M471B5273CH0-CH9 4GB

Samsung M471B5273CH0-CH9 4GB

总分

Micron Technology MTA8ATF1G64HZ-2G3B1 16GB

Micron Technology MTA8ATF1G64HZ-2G3B1 16GB

差异规格评论

差异

Samsung M471B5273CH0-CH9 4GB

需要考虑的原因
Samsung M471B5273CH0-CH9 4GB

报告一个错误

Micron Technology MTA8ATF1G64HZ-2G3B1 16GB

需要考虑的原因
Micron Technology MTA8ATF1G64HZ-2G3B1 16GB

报告一个错误

低于PassMark测试中的延时，ns

28 48

左右 -71% 更低的延时
更快的读取速度，GB/s

12.2 8.9

测试中的平均数值
更快的写入速度，GB/s

9.3 5.9

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Samsung M471B5273CH0-CH9 4GB

Micron Technology MTA8ATF1G64HZ-2G3B1 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

48 28
读取速度，GB/s

8.9 12.2
写入速度，GB/s

5.9 9.3
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1420 2382

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Kingston ACR16D3LS1KBG/8G 8GB

Chun Well Technology Holding Limited ND4U0840180BRPDE 8GB

Chun Well Technology Holding Limited ND4U0840180BRPDE 8

Kingston ACR512X64D3S13C9G 4GB

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Apacer Technology 78.DAGNN.4030B 16GB

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Crucial Technology BLT4G3D1337DT1TX0. 4GB

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G Skill Intl F4-4000C17-16GVKB 16GB

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A-DATA Technology AM2L16BC4R1-B0AS 4GB

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Patriot Memory (PDP Systems) PSD48G26662 8GB

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Nanya Technology M2S4G64CB8HG5N-CG 4GB

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Kingston 9905783-025.A01G 16GB

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Apacer Technology 78.01GA0.9K5 1GB

Apacer Technology 78.01GA0.9K5 1GB

Essencore Limited IM48GU48N28-GGGHM 8GB

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Samsung M393B1K70CH0-CH9 8GB

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Apacer Technology 78.BAGP4.AR50C 4GB

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Kingston KHX1600C9D3/8G 8GB

Kingston KHX1600C9D3/8G 8GB

Apacer Technology 78.D2GF2.AU30B 16GB

Apacer Technology 78.D2GF2.AU30B 16GB

Samsung M471B5273EB0-CK0 4GB

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G Skill Intl F4-3600C17-4GTZ 4GB

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Patriot Memory (PDP Systems) PSD22G8002 2GB

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Lexar Co Limited LD4BU008G-H3200ULH 8GB

Lexar Co Limited LD4BU008G-H3200ULH 8GB

Kingston 9905403-003.B00LF 4GB

Kingston 9905403-003.B00LF 4GB

Samsung M378A1K43BB1-CRC 8GB

Samsung M378A1K43BB1-CRC 8GB

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Samsung M378B5673FH0-CH9 2GB

Samsung M378B5673FH0-CH9 2GB

Crucial Technology BLS8G4D26BFSBK.8FD 8GB

Crucial Technology BLS8G4D26BFSBK.8FD 8GB

Samsung M393A1G40DB0-CPB 8GB

Samsung M393A1G40DB0-CPB 8GB

Kingston XRMWRN-HYA 16GB

Kingston XRMWRN-HYA 16GB